| Paper Title | Page |
|---|---|
|
288 V-10 V DC- DC Converter Application Using AlGaN/GaN HFETs Authors: Seikoh Yoshida, Mitsuru Masuda, Yuki Niiyama, Jiang Li, Nariaki Ikeda, Takehiko Nomura |
1321 |
|
600V GaN Schottky Barrier Power Devices for High Volume and Low Cost Applications Authors: Lin Lin Liu, Ting Gang Zhu, Michael Murphy, Marek Pabisz, Milan Pophristic, Boris Peres, Tom Hierl |
1251 |
|
A First-Principles Study of Mg-Related Defects in GaN Authors: K.J. Chang, Sun Ghil Lee |
1137 |
|
Advanced Real Time Metrology of AlGaN/GaN and InGaN/GaN Epitaxy Authors: Tong Ho Kim, Soo Jeong Choi, April S. Brown, Maria Losurdo, Giuseppe Valerio Bianco, Maria M. Giangregorio, Giovanni Bruno |
124 |
|
Al-Si-Ti Ohmic Contacts on N-Type Gallium Nitride Authors: Nicolas Thierry-Jebali, Olivier Ménard, Arnaud Yvon, Emmanuel Collard, Miao Zhe, Olivier Dezellus, Christian Brylinski, Jean Claude Viala |
812 |
|
Analysis of the Interfacial Relationship in GaN/(0001) AI2O3 Layers Authors: B. Barbaray, V. Potin, Piere Ruterana, Gerard Nouet |
111 |
|
Annealing Effects on GaN/ZnO/Si Structures Prepared by RF Magnetron Sputtering Authors: Hyoun Woo Kim, S.H. Shim, C. Lee |
137 |
|
Atomic Resolution and In Situ Characterization of Structural Ceramics Authors: Yuichi Ikuhara |
43 |
|
Ball Milling of Soft Metals: The Formation of Gallium Nitride Authors: Pierre Millet, Andrzej Calka |
321 |
|
Carrier Diffusivity in Highly Excited Bulk SiC, GaN, and Diamond Crystals by Optical Probes Authors: Kestutis Jarašiūnas, Patrik Ščajev, Tadas Malinauskas, Masashi Kato, Evgenii Ivakin, Milos Nesladek, Ken Haenen, Ümit Özgür, Hadis Morkoç |
309 |