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Articles by keyword: «Gate-Oxide Integrity»

• Application of Gate Oxide Integrity to the Evaluation of the Efficiency of Internal and External Gettering Sites in Si Wafers
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p393)
• Combined MOS/EBIC and Tem Study of Electrically Active Defects in SOI Wafers
  Published in: Beam Injection Assessment of Defects in Semiconductors (p61)
• Defect Control in Nitrogen Doped Czochralski Silicon Crystals
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p161)
• Gate Oxide Defect Analysis Using Scanning Electron Microscopy (SEM)/Metal Oxide Semiconductor (MOS)/Electron Beam Induced Current (EBIC) with Sub-Nano Ampere Current Breakdown
  Published in: Beam Injection Assessment of Defects in Semiconductors (p395)
• Gate-Oxide Integrity Evaluation Using Non-Ideal Metal-Oxide-Silicon Capacitor Structures
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p735)