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Articles by keyword: «Gate Oxide»

• Abnormal Hysteresis Property of SiC Oxide C-V Characteristics
  Published in: Silicon Carbide and Related Materials 2001 (p1021)
• Co-Formation of Gate Electrode and Ohmic Contacts in SiC Power MOSFETs
  Published in: Silicon Carbide and Related Materials - 2002 (p661)
• Dislocation-Free Shallow Trench Isolation (STI) Chemical Mechanical Polishing (CMP) Process for Embedded Flash Memory
  Published in: Advances in Nanomaterials and Processing (p29)
• Effects of Fabrication Process on the Electrical Characteristics of n-Channel MOSFETs Irradiated with Gamma-Rays
  Published in: Silicon Carbide and Related Materials 2007 (p707)
• Effects of Surface Morphological Defects and Crystallographic Defects on Reliability of Thermal Oxides on C-Face
  Published in: Silicon Carbide and Related Materials 2011 (p789)
• Experimental and First-Principles Studies of the Band Alignment at the HfO₂/4H-SiC (0001) Interface
  Published in: Silicon Carbide and Related Materials 2005 (p1071)
• Gate Oxide with High Dielectric Breakdown Strength after Undergoing a Typical Power MOSFET Fabrication Process
  Published in: Silicon Carbide and Related Materials - 2002 (p725)
• High Performance SiC IEMOSFET/SBD Module
  Published in: Silicon Carbide and Related Materials 2011 (p1053)
• High-Reliability ONO Gate Dielectric for Power MOSFETs
  Published in: Silicon Carbide and Related Materials 2004 (p677)
• Impact of Carbon Cap Annealing on Gate Oxide Reliability on 4H-SiC (000-1) C-Face
  Published in: Silicon Carbide and Related Materials 2008 (p549)
• Impact of Dislocations on Gate Oxide in SiC MOS Devices and High Reliability ONO Dielectrics
  Published in: Silicon Carbide and Related Materials 2005 (p955)
• Impact of the Wafer Quality on the Reliability of MOS Structure on the C-Face of 4H-SiC
  Published in: Silicon Carbide and Related Materials 2007 (p783)
• Implementation of Sub-Resolvable Features for Precise Electrical Characterization of SiC Gate Oxide Parameters
  Published in: Silicon Carbide and Related Materials 2011 (p797)
• Investigation of Pits Formed at Oxidation on 4H-SiC
  Published in: Silicon Carbide and Related Materials 2007 (p377)
• Microscopic Examination of SiO₂/4H-SiC Interfaces
  Published in: Silicon Carbide and Related Materials 2010 (p330)