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Articles by keyword: «Ge»

• A Theoretical Estimation of the Charge Density Distribution in the Diluted Magnetic Semiconductors of Si_1-xM_x and Ge_1-xM_x (M = V, Mn, Co)
  Published in: Characterization of Advanced Materials (p167)
• Atomic Layer Epitaxy of (Si_1-xC_1-y)Ge_x+y Layers on 4H-SiC
  Published in: Silicon Carbide and Related Materials 2005 (p1559)
• Atomically Controlled Plasma Processing for Group IV Quantum Heterostructure Formation
  Published in: Technology Evolution for Silicon Nano-Electronics (p98)
• B Diffusion in Si Predamaged with Si⁺, C⁺ and Ge⁺ Implantation
  Published in: Diffusion in Materials - DIMAT 1992 (p967)
• Characterization of Structural Defects in Germanium Epitaxially Grown on Nano-Structured Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIV (p43)
• Cleaning and Surface Preparation for SiGe and Ge Channel Device
  Published in: Ultra Clean Processing of Semiconductor Surfaces X (p19)
• Copper Species in Ultra-Pure Germanium Crystals
  Published in: Defects in Semiconductors 18 (p701)
• Crystal Structure and Thermal Expansion of Ge-Doped Mn₃CuN
  Published in: Chinese Ceramics Communications II (p422)
• Defect Characterization of Poly-Ge and VFG-Grown Ge Material
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p483)
• Effect of Annealing Temperature on the Optical and Structural Properties of Ge Doped ZnO Films
  Published in: Multi-Functional Materials and Structures Engineering (p79)
• Electric Activity of Dislocation Networks in Si and Ge
  Published in: Intergranular and Interphase Boundaries in Materials (p677)
• Etch Rate Study of Germanium, GaAs and InGaAs: A Challenge in Semiconductor Processing
  Published in: Ultra Clean Processing of Semiconductor Surfaces IX (p203)
• Frenkel Defects in Low Temperature e^-- Irradiated Ge and Si Investigated by X-Ray Diffraction
  Published in: Defects in Semiconductors 18 (p1141)
• High Dose High Temperature Ion Implantation of Ge into 4H-SiC
  Published in: Silicon Carbide and Related Materials 2005 (p851)
• Improvement of 4H-SiC Selective Epitaxial Growth by VLS Mechanism Using Al and Ge Based Melts
  Published in: Silicon Carbide and Related Materials 2005 (p275)