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Articles by keyword: «Germanium»

• 3C-SiC Islands Formation on 6H-SiC(0001) Substrate from a Liquid Phase
  Published in: Silicon Carbide and Related Materials 2007 (p203)
• A Study of the Influence of Typical Wet Chemical Treatments on the Germanium Wafer Surface
  Published in: Ultra Clean Processing of Silicon Surfaces VII (p27)
• A Wet Etching Technique to Reveal Threading Dislocations in Thin Germanium Layers
  Published in: Ultra Clean Processing of Semiconductor Surfaces VIII (p83)
• AES Study of the GaAs-Germanium Oxynitride Interface
  Published in: Passivation of Metals and Semiconductors (p165)
• Analysis of Auger Recombination Characteristics in High Resistivity Si and Ge
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIV (p427)
• Bulk and Grain Boundary Diffusion of Ge and Sn in Intrinsic Germanium
  Published in: Diffusion in Materials DIMAT 1996 (p1047)
• Calibration Factor for Determination of Interstitial Oxygen Concentration in Germanium by Infrared Absorption
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p735)
• Carrier Accumulation in Silicon-On-Insulator Structures Containing Ge Nanocrystals in the Burried SiO₂ Layer
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p77)
• Charged Dislocations in Germanium
  Published in: Dislocations '93 (p497)
• Co-Germanide Schottky Contacts on Ge
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p107)
• Comparison of Defects Created by Plasma-Based Ion Implantation and Conventional Implantation of Hydrogen in Germanium
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p101)
• Comparison of Muonium (Hydrogen) Dynamics in Germanium and Silicon
  Published in: Defects in Semiconductors 19 (p179)
• Configuration of DV Complexes In Ge: Positron Probing of Ion Cores
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p89)
• Defect Removal, Dopant Diffusion and Activation Issues in Ion-Implanted Shallow Junctions Fabricated in Crystalline Germanium Substrates
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p691)
• Diamond Turning of Single Crystal Germanium with an Oscillating Rotary Tool
  Published in: Advances in Abrasive Technology V (p395)