Papers by Keyword: Growth Rate

Abstract: Unidirectional solidification is preferred to multidirectional solidification for growing crystals in a particular direction. An experimental set-up consisting of Bridgman type of upward directional solidification was employed for the present investigation. The main aim of the present investigation was to assess the effect of unidirectional upward solidification on the segregation of off-eutectic Pb-Sn alloys at different translational speeds of the experimental set-up. Solidification experiments were conducted on hypoeutectic and hypereutectic Lead-Tin alloys. Different combinations of growth rate V and composition Co. were used to investigate their effect on longitudinal macro segregation. Macro segregation along the length of the samples was observed in hypoeutectic Pb-Sn alloys whereas no such macro segregation was observed in hypereutectic alloys. The intensity of longitudinal macro segregation was found to increase with the increase in initial tin content of the alloy, increase in distance from the chill end and decrease in the solidification rate.

Abstract: The effect of argon content upon the growth rate and the properties of diamond thin films grown with different grains sizes are explored. An argon-free and argon-rich gas mixture of methane and hydrogen is used in a hot filament chemical vapor deposition reactor. Characterization of the films is accomplished by scanning electron microscopy, Raman spectroscopy and high-resolution x-ray diffraction. An extensive comparison of the growth rate values and films morphologies obtained in this study with those found in the literature suggests that there are distinct common trends for microcrystalline and nanocrystalline diamond growth, despite a large variation in the gas mixture composition. Included is a discussion of the possible reasons for these observations.

Abstract: CVD SiC material with many excellent physical and chemical properties was used widely in the field of aerospace as reflector materials. In addition, CVD SiC thin film materials because of its compact structure, high purity can also be used as precision optical components of semiconductor industry. But the CVD process is a complex chemical process and the reaction process is very time consuming. Research of chemical vapor deposition for preparing silicon carbide process mechanism is important significance for the expansion of the application of silicon carbide. In this paper, CVD SiC coatings were fabricated by the pyrolysis of methyltrichlorosilane (MTS) in hydrogen at a low pressure. XRD and EDS were used to characterize the component of intermediate. SEM was used to observe the surface morphology and microstructure of coatings. The results indicated that key problem to be solved is to control the growth rate of SiC for high quality deposition coating, while the growth rate is also affected by process parameters. To obtain the materials to meet the use requirements, the need for control of each parameter in the reaction process.

Abstract: In order to diffuse the use of SiC, mass-production technologies of SiC wafers are needed. It is easy to be understood that high-speed and long-sized growth technologies are connected directly with mass-production technologies. The gas source growth method such as HT-CVD has the possibilities and the potential of the high-speed and long-sized growth. In this article, it was clarified that the high growth rate were achieved by the control of the source gas partial pressures and by the gas boundary layers. The average growth rate was 1mm/h on the f4 inch-diameter crystal, and the maximum growth rate reached 3.6 mm/h on the 12.5x25 mm tetragon by the above gas control. The crystal qualities of the gas source methods were also evaluated the equivalent level in comparison with the sublimation method. Concerning the 1mm/h-growth f3 inch crystal, the densities of TSDs were kept in the 10² cm^-2 levels from the seed to the upper-side of the ingot. Moreover, the ingot size increased year by year and a f4 inch x 43 mm sized ingot has been developed.

Abstract: We have developed a single-wafer vertical epitaxial reactor which realizes high-throughput production of 4H-SiC epitaxial layer (epilayer) with a high growth rate [1,2]. In this paper, in order to evaluate the crystalline defects which can affect the characteristics of devices, we investigated the formation of variety of in-grown stacking faults (SFs) in detail. Synchrotron X-ray topography, photoluminescence (PL) and transmission electron microscopy are employed to analyze the SFs and the origins of the SF formation are discussed. The result in reducing in-grown SFs in fast epitaxial growth is also shown.

Abstract: This paper reports on recent advances in 4H-SiC epitaxial growth toward high-throughput production of high-quality and uniform 150 mm-diameter 4H-SiC epilayers by enhancing of growth rates, improving uniformity and reducing defect densities. A vertical single-wafer type SiC epitaxial reactor is employed and high-speed wafer rotation is confirmed as effective, not only for enhancing growth rates without increasing the source gas supply but also improving thickness and doping uniformities. The current levels of reducing particle-induced defects, in-grown stacking faults, basal plane dislocations and the Z_1/2 center (carbon vacancies) are reviewed.

Abstract: An in situ technique for monitoring the growth rate and optical constants of the thin semiconductor layer by the normal-incidence reflectance is proposed. To demonstrate the feasibility of the proposed method, the variation of the air gap between two glasses is used to simulate growth system. We also used the spin coater to thin the thickness of the salad oil to test the performance of the measurement system. The experiments indicate that we can determine the thickness variation and optical constants of the test sample in real time.

Abstract: This article gives the results of crystal growth by a High-Temperature Gas Source Method such as HTCVD. It was reported that clusters were formed and were an important factor of the growth in HTCVDs, and some influences of them were investigated. The difference between the model with and without clustering was compared. The experimental growth rates corresponded to the cluster model, and this indicated that clusters affect the crystal growth. Relations between the experimental growth rate and the growth temperature as a function of gas flow ratio were investigated. The gas flow ratio was defined: (SiH₄+C₃H₈) / (SiH₄+C₃H₈+H₂). Maximum growth rate was 2.3mm/h under high source gas ratio. At present, a Φ75mm×54mm sized ingot has been developed.

Abstract: The influence of withdrawal rate on the microstructure of directionally solidified Mg-x%Zn (x=2, 4, 6) alloys was investigated in this paper. It was found that with the withdrawal rates increased from 20 μm/s to 60 μm/s, the morphology of the solid-liquid interface changed from planer to cellular dendrite. When the growth rate was further increased to 120 μm/s, the solidification microstructure appeared to be the typical dendrite structure with the developed secondary dendrite arms. Meanwhile, the dendrite arm spacing decreased with the increase of growth rate. Under the same solidification conditions, the microstructure went through cell branch transformation with the increase of Zn content within a lower withdrawal rate range; while the Zn content did not affect the morphology at a higher withdrawal rate. As well, the microstructure was refined gradually with the increase of Zn content. The effects of withdrawal rate and alloying content on morphology were analyzed by constitutional supercooling and the MS theory.

Abstract: Elastic fields, generating by defects of the structure, influence the diffusion processes. It leads to the alteration of the phase transformation kinetic. One of the chief aims of our work is to obtain general equations for the diffusion fluxes under strain that give the possibility for using these equations at low temperatures, as in this case the strain influence on the diffusion fluxes is manifested in maximal degree. Our approach takes into consideration, that the strains can alter the surrounding atom configuration near the jumping one and consequently the local magnitude of the activation barrier and a rate of atom jump. The rates of atom jumps in different directions define the flux density of the vacancies. Now we take into account, that strain values are different in the saddle point and in the rest atom position, in differ from our consideration that was done by us earlier. As a result in the development of our approach the general equations for the vacancy fluxes are obtained for fcc and bcc metals. In our paper we discuss the main features of the theory of diffusion under stress and its applications. In particular we examine how elastic stress, arising from nanovoids, influence the diffusion vacancy fluxes and the growth rate of voids in metals.