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Articles by keyword: «HRXRD»

• Comparative Study of 3C-GaN Grown on Semi-Insulating 3C-SiC/Si(100) Substrates
  Published in: Silicon Carbide and Related Materials 2008 (p943)
• Critical Thickness Determination of II-VI Semiconductors by Rheed and X-Ray Diffraction
  Published in: II-VI Compounds and Semimagnetic Semiconductors (p147)
• HRXRD Investigations on Epitaxially Grown ZnTe, ZnSe and ZnSeTe Layers
  Published in: Defect and Diffusion Forum Vols. 109-110 (p19)
• Impact of SiC Structural Defects on the Degradation Phenomenon of Bipolar SiC Devices
  Published in: Silicon Carbide and Related Materials - 2002 (p917)
• Investigation of Low Angle Grain Boundaries in Modified-Lely SiC Crystals by High Resolution X-ray Diffractometry
  Published in: Silicon Carbide and Related Materials - 1999 (p493)
• Structural Characterization of GaN Epitaxial Layers Grown on 4H-SiC Substrates with Different Off-Cut
  Published in: Silicon Carbide and Related Materials 2008 (p939)
• Structural Properties of 3C-SiC Grown by Sublimation Epitaxy
  Published in: Silicon Carbide and Related Materials 2008 (p181)