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Articles by keyword: «HTCVD»

• Clustering of Vacancies in Semi-Insulating SiC Observed with Positron Spectroscopy
  Published in: Silicon Carbide and Related Materials 2005 (p575)
• Comparison between Various Chemical Systems for the CVD Step in the CF-PVT Crystal Growth Method
  Published in: Silicon Carbide and Related Materials 2003 (p135)
• Electrical Characterization of High-Voltage 4H-SiC Diodes on High-Temperature CVD-Grown Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2001 (p1285)
• Fast SiC Epitaxial Growth in a Chimney CVD Reactor and HTCVD Crystal Growth Developments
  Published in: Silicon Carbide and Related Materials - 1999 (p131)
• Growth and Characterisation of SiC Power Device Material
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p97)
• Growth of High Quality p-Type 4H-SiC Substrates by HTCVD
  Published in: Silicon Carbide and Related Materials - 2002 (p21)
• Growth of Thick AlN Layers by High Temperature CVD (HTCVD)
  Published in: Silicon Carbide and Related Materials 2007 (p1269)
• In Situ Observation of Mass Transfer in the CF-PVT Growth Process by X-Ray Imaging
  Published in: Silicon Carbide and Related Materials 2005 (p63)
• Influence of Semi-Insulating Substrate Purity on the Output Characteristics of 4H-SiC MESFETs
  Published in: Silicon Carbide and Related Materials 2001 (p1363)
• Influence of the N/Al Ratio in the Gas Phase on the Growth of AlN by High Temperature Chemical Vapor Deposition (HTCVD)
  Published in: Silicon Carbide and Related Materials 2008 (p987)
• Multi-Level Simulation Study of Crystal Growth and Defect Formation Processes in SiC
  Published in: Silicon Carbide and Related Materials 2007 (p131)
• Observation of Vacancy Clusters in HTCVD Grown SiC
  Published in: Silicon Carbide and Related Materials 2004 (p469)
• SiC Crystal Growth by HTCVD
  Published in: Silicon Carbide and Related Materials 2003 (p9)
• SiC HTCVD Simulation Modified by Sublimation Etching
  Published in: Silicon Carbide and Related Materials 2005 (p107)
• Simulation Study for HTCVD of SiC Using First-Principles Calculation and Thermo-Fluid Analysis
  Published in: Silicon Carbide and Related Materials 2007 (p47)