Papers by Keyword: Half-Heusler

Abstract: Half-Heusler compound YNiBi thin films have been prepared by direct current (DC) magnetron sputtering from an YNiBi target. The film structure and surface morphology of YNiBi thin films were analyzed with X-ray diffraction (XRD) and atomic force microscopy (AFM). The electrical properties of the films were studied by Hall measurements. XRD patterns show that the films prepared at lower sputtering pressure and higher growth temperature exhibit minimum full width at half maximum (FWHM) and maximum diffraction peaks which belong to the same family of crystal planes. Results of AFM reveal that the surface of a variety of fabricated YNiBi films is smooth and keeps good adhesion to the substrate. The increasing of substrate temperature and slightly lowering of sputtering pressure are in favor of reducing the root mean square roughness during magnetron sputtering process. The film with high crystallinity has an electrical conductivity of 938 S/cm and carrier concentration of 2.15×10²¹ cm^-3.

Abstract: Half-heusler TiCoSb1-xSnx (0.00≤x≤0.05) alloys were prepared by mechanical alloying of elemental powders, and consolidated by vacuum hot pressing. Sn doped half-Heusler phases of TiCoSb was successfully produced in all doping ranges by vacuum hot pressing using as-milled powders without subsequent annealing. However, a little fraction of CoSb phase appeared after hot pressing. Thermoelectric properties as functions of temperature were evaluated for hot pressed specimens. Seebeck coefficients showed to change in conductivity by doping and the absolute value revealed relatively low. It is shown that electrical conductivity is relatively high and thermal conductivities are compatibly low. Sb doping up to x=0.02 in TiCoSb1-xSnx was shown to be effective on thermoelectric properties in this study.

Abstract: Half-Heusler alloys are one of the potential thermoelectric materials for medium to high temperature range application. As a part of fundamental study to establish processing route and to observe thermoelectric properties in undoped state, ZrCoSb was selected, processed and evaluated. In an attempt to produce a half-Heusler thermoelectric materials having ultra fine grain structures, ZrCoSb was synthesized by mechanical alloying of stoichiometric elemental powder compositions, and consolidated by vacuum hot pressing. Phase transformations during mechanical alloying and hot consolidation were investigated using XRD, SEM and EDS. Single-phase, half-Heusler was successfully produced by vacuum hot pressing using as-milled powders without subsequent annealing. Thermoelectric properties as functions of temperature were evaluated in terms of Seebeek coefficient, electrical conductivity, thermal conductivity and the figure of merit for the hot pressed specimens. Mechanically alloyed half-Heusler phase, ZrCoSb, appeared to have a great potential as a thermoelectric materials in this study.

Abstract: Recent search for novel thermoelectric materials has revealed a new class of compounds with half-Heusler structure as good candidates for higher performance thermoelectric conversion [1-2], since the structure was first found [3]. The unit cell of the half-Heusler with a space group F4¯ 3m consists of 4 interpenetrating cubic lattices. The crystallographic sites (0,0,0) and (1/4, 1/4, 1/4) are occupied by two different transition metals, the (1/2, 1/2, 1/2) site is occupied by Sn, Sb, or Bi, and the site (3/4, 3/4, 3/4) is empty [4,5]. Candidates with this structure for the investigation would be categorized into the combination of (Ti/Zr/Hf)(Co/Ni/Pt)(Sb/Sn/Bi) [4-6].