HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by keyword: «Hall Mobility»

• Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs
  Published in: Silicon Carbide and Related Materials 2011 (p437)
• Electrical Properties of 3C-SiC Grown on Si by CVD Method using Si₂(CH₃)₆
  Published in: Silicon Carbide and Related Materials - 1999 (p711)
• Electrical Properties of Pulsed Laser Deposited ZnO Thin Films
  Published in: Nanomaterials and Devices: Processing and Applications (p121)
• Electronic and Electrical Properties of Polycrystalline Silicon: Effects of Grain Boundary Segregation
  Published in: Polycrystalline Semiconductors IV (p21)
• Growth and Characterization of Ge_1-xSn_x Layers for High Mobility Tensile-Strained Ge Channels of CMOS Devices
  Published in: PRICM7 (p1788)
• Growth and Characterization of Urea Doped p-Type ZnO Thin Film Grown by Pulsed Laser Deposition
  Published in: Nanomaterials and Devices: Processing and Applications (p127)
• Growth and Transport Property of Polycrystalline Silicon Fabricated with Intentional Orientation Control on Glass
  Published in: Electroceramics in Japan III (p125)
• Hall Effect and Admittance Measurements of n-Channel 6H-SiC MOSFETs
  Published in: Silicon Carbide and Related Materials 2006 (p791)
• Hall Effect Measurements in SiC Buried-Channel MOS Devices
  Published in: Silicon Carbide and Related Materials 2003 (p1287)
• Intrinsic Mobility of Conduction Electrons in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p483)
• Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETs
  Published in: HeteroSiC & WASMPE 2011 (p134)
• Nitridation of the SiO₂/SiC Interface by N⁺ Implantation: Hall versus Field Effect Mobility in n-Channel Planar 4H-SiC MOSFETs
  Published in: Silicon Carbide and Related Materials 2009 (p491)
• Photoconductivity Peculiarities in CdSe Field Transistor Layer
  Published in: Polycrystalline Semiconductors III (p595)
• Properties of Transparent Conducting Indium Tin Oxide Films Deposited by Reactive e-Beam Evaporation on Heated Glass
  Published in: Polycrystalline Semiconductors V (p249)
• Thermoelectric Properties of Layer-Structured (ZnO)_mIn₂O₃(m=Integer) and Effects of Elemental Substitution
  Published in: Electroceramics in Japan II (p71)