HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by keyword: «High-k»

• All-Wet, Metal-Compatible High-Dose-Implanted Photoresist Strip
  Published in: Ultra Clean Processing of Semiconductor Surfaces X (p101)
• Behaviour of High-k Dielectric Materials with Classical Cleaning Chemistries
  Published in: Ultra Clean Processing of Silicon Surfaces VI (p15)
• Characteristics of HfO₂ Dielectric Layer Grown by MOMBE
  Published in: Designing, Processing and Properties of Advanced Engineering Materials (p1005)
• Critical Thickness Threshold in HfO₂ Layers
  Published in: Ultra Clean Processing of Semiconductor Surfaces VIII (p67)
• Current Collapse Characteristic of AlGaN/GaN MIS-HEMT
  Published in: Silicon Carbide and Related Materials 2007 (p1333)
• Design and Analysis of a Dual-Step Field-Plate Terminated 4H-SiC Schottky Diode Using SiO₂/High-K Dielectric Stack
  Published in: Silicon Carbide and Related Materials 2005 (p1171)
• Enhanced Surface Preparation Techniques for the Si/High-k Interface
  Published in: Ultra Clean Processing of Silicon Surfaces VII (p11)
• Exploratory Materials and Devices to Advance CMOS beyond the Classical Si Roadmap
  Published in: Ultra Clean Processing of Semiconductor Surfaces X (p3)
• HF Based Solutions for HfO₂ Removal; Effect of pH and Temperature on HfO₂: SiO₂ Etch Selectivity
  Published in: Ultra Clean Processing of Silicon Surfaces VII (p97)
• High Performance RF FETs Using High-k Dielectrics on Wafer-Scale Quasi-Free-Standing Epitaxial Graphene
  Published in: Silicon Carbide and Related Materials 2011 (p669)
• High-K: Latest Developments and Perspectives
  Published in: Rapid Thermal Processing and beyond: Applications in Semiconductor Processing (p165)
• Interface and Carrier Transport Behaviour in Al/HfO₂/SiO₂/SiC Structure
  Published in: Silicon Carbide and Related Materials 2007 (p759)
• Material Loss Impact on Device Performance for 32nm CMOS and Beyond
  Published in: Ultra Clean Processing of Semiconductor Surfaces IX (p245)
• Observation of Leakage Sites in High-k Gate Dielectrics in MOSFET Devices by Electron-Beam-Induced Current Technique
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p449)
• On the Application of a Thin Ozone Based Wet Chemical Oxide as an Interface for ALD High-k Deposition
  Published in: Ultra Clean Processing of Silicon Surfaces VII (p19)