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Articles by keyword: «High-k Dielectrics»

• 4H-SiC MOSFETs Using Thermal Oxidized Ta₂Si Films as High-k Gate Dielectric
  Published in: Silicon Carbide and Related Materials 2004 (p713)
• Advanced TXRF Analysis: Background Reduction when Measuring High-k Materials and Mapping Metallic Contamination
  Published in: Ultra Clean Processing of Semiconductor Surfaces VIII (p285)
• AlON/SiO₂ Stacked Gate Dielectrics for 4H-SiC MIS Devices
  Published in: Silicon Carbide and Related Materials 2008 (p541)
• Benefits of High-k Dielectrics in 4H-SiC Trench MOSFETs
  Published in: Silicon Carbide and Related Materials 2003 (p1433)
• Characterization of Al-Based High-k Stacked Dielectric Layers Deposited on 4H-SiC by Atomic Layer Deposition
  Published in: Silicon Carbide and Related Materials 2010 (p441)
• Chemical Processing and Materials Compatibility of High-K Dielectric Materials for Advanced Gate Stacks
  Published in: Ultra Clean Processing of Silicon Surfaces V (p19)
• Effect of Nuclear Scattering Damage at SiO₂/SiC and Al₂O₃/SiC Interfaces – a Radiation Hardness Study of Dielectrics
  Published in: Silicon Carbide and Related Materials 2011 (p805)
• Effect of Post Deposition Annealing on the Characteristics of Sol-Gel Derived HfO₂ on 4H-SiC
  Published in: Silicon Carbide and Related Materials 2008 (p545)
• Electrical Characterization of Deposited and Oxidized Ta₂Si as Dielectric Film for SiC Metal-Insulator-Semiconductor Structures
  Published in: Silicon Carbide and Related Materials 2003 (p845)
• Experimental and First-Principles Studies of the Band Alignment at the HfO₂/4H-SiC (0001) Interface
  Published in: Silicon Carbide and Related Materials 2005 (p1071)
• Growth and Properties of Gadolinium Oxide Dielectric Layers on Silicon Carbide for High-K Application
  Published in: Silicon Carbide and Related Materials 2006 (p655)
• Hafnium Oxide on Silicon: A Non-Destructive Characterization of the Interfacial Layer
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p653)
• High-k Gate Dielectrics on Silicon and Germanium: Impact of Surface Preparation
  Published in: Ultra Clean Processing of Silicon Surfaces VII (p3)
• Influence of HfO₂ Control Oxide ALD Precursor Chemistry for Nitride Memories
  Published in: Advances in Innovative Materials and Applications (p42)
• Modelling of the Anomalous Field-Effect Mobility Peak of O-Ta₂Si/4H-SiC High-k MOSFETs Measured in Strong Inversion
  Published in: Silicon Carbide and Related Materials 2005 (p1059)