HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by keyword: «High Growth Rate»

• Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates
  Published in: Silicon Carbide and Related Materials 2010 (p59)
• Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles
  Published in: Silicon Carbide and Related Materials 2011 (p113)
• Chloride-Based SiC Epitaxial Growth
  Published in: Silicon Carbide and Related Materials 2008 (p89)
• Development of a High Rate 4H-SiC Epitaxial Growth Technique Achieving Large-Area Uniformity
  Published in: Silicon Carbide and Related Materials 2007 (p111)
• Development of High Growth Rate SiC Epi-Reactor with Controlled Thermal Gradient
  Published in: Silicon Carbide and Related Materials 2006 (p81)
• Epitaxial Layers Grown with HCl Addition: A Comparison with the Standard Process
  Published in: Silicon Carbide and Related Materials 2005 (p163)
• Growth at High Rates and Characterization of Bulk 3C-SiC Material
  Published in: Silicon Carbide and Related Materials - 2002 (p115)
• Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition
  Published in: Silicon Carbide and Related Materials 2008 (p93)
• High Growth Rate (up to 20 µm/h) SiC Epitaxy in a Horizontal Hot-Wall Reactor
  Published in: Silicon Carbide and Related Materials 2004 (p77)
• High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiC
  Published in: Silicon Carbide and Related Materials 2010 (p115)
• High Uniformity with Reduced Surface Roughness of Chloride Based CVD Process on 100mm 4° Off-Axis 4H-SiC
  Published in: Silicon Carbide and Related Materials 2011 (p93)
• Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD
  Published in: Silicon Carbide and Related Materials 2007 (p107)
• Homoepitaxial Growth of Cubic Silicon Carbide by Sublimation Epitaxy
  Published in: Silicon Carbide and Related Materials 2001 (p279)
• Low Trap Concentration and Low Basal-Plane Dislocation Density in 4H-SiC Epilayers Grown at High Growth Rate
  Published in: Silicon Carbide and Related Materials 2006 (p129)
• Preparation and Characterization of Titania Porous-Nanotube Arrays with a High Growth Rate on Flexible Stainless Steel Substrate
  Published in: New Materials, Applications and Processes (p760)