HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by keyword: «High Power»

• 12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance
  Published in: Silicon Carbide and Related Materials 2007 (p1187)
• 1200-V, 50-A, Silicon Carbide Vertical Junction Field Effect Transistors for Power Switching Applications
  Published in: Silicon Carbide and Related Materials 2007 (p1047)
• 9 kV 4H-SiC IGBTs with 88 mΩ·cm² of R _{diff, on}
  Published in: Silicon Carbide and Related Materials 2006 (p771)
• A 1cm × 1cm, 5kV, 100A, 4H-SiC Thyristor Chip for High Current Modules
  Published in: Silicon Carbide and Related Materials 2005 (p1397)
• Analysis of 3D Stator Temperature Field in High Voltage and High Power PMSM
  Published in: Material Science and Engineering Technology (p775)
• Analysis of Power Dissipation and High Temperature Operation in 4H-SiC Bipolar Junction Transistors with 4.9 MW/cm² Power Density Handling Ability
  Published in: Silicon Carbide and Related Materials 2003 (p1121)
• Comparison of Bipolar and Unipolar SiC Switching Devices for Very High Power Applications
  Published in: Silicon Carbide and Related Materials 2006 (p975)
• Design of Yb Fiber High Power Amplifier through 915nm Pumping
  Published in: Advanced Research on Material Engineering, Chemistry, Bioinformatics (p42)
• Effects of SiO₂ Substitution on Piezoelectric and Mechanical Properties of PMS-PZT Ternary Piezoelectric Ceramics
  Published in: High-Performance Ceramics III (p215)
• Fast Switching (41 MHz), 2.5 mΩ•cm², High Current 4H-SiC VJFETs for High Power and High Temperature Applications
  Published in: Silicon Carbide and Related Materials 2005 (p1183)
• High Frequency 4H-SiC MOSFETs
  Published in: Silicon Carbide and Related Materials 2006 (p795)
• High Power Inverter Circuit from GTO to IGCT and its Application on AC Driving Locomotive
  Published in: Progress in Power and Electrical Engineering (p1394)
• High Power-Density 4H-SiC RF MOSFETs
  Published in: Silicon Carbide and Related Materials 2005 (p1277)
• High Temperature, High Current, 4H-SiC Accu-DMOSFET
  Published in: Silicon Carbide and Related Materials - 1999 (p1271)
• High-Power P-Channel UMOS IGBT's in 6H-SiC for High Temperature Operation
  Published in: Silicon Carbide and Related Materials - 1999 (p1427)