| Paper Title | Page |
|---|---|
|
15 kV, Large Area (1 cm2), 4H-SiC p-Type Gate Turn-Off Thyristors Authors: Lin Cheng, Anant K. Agarwal, Craig Capell, Michael O'Loughlin, Khiem Lam, Jon Zhang, Jim Richmond, Al Burk, John W. Palmour, Aderinto A. Ogunniyi, Heather K. O'Brien, Charles J. Scozzie |
978 |
|
16 kV, 1 cm2, 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications Authors: Lin Cheng, Anant K. Agarwal, Michael O'Loughlin, Craig Capell, Khiem Lam, Charlotte Jonas, Jim Richmond, Al Burk, John W. Palmour, Aderinto A. Ogunniyi, Heather K. O'Brien, Charles J. Scozzie |
895 |
|
1836 V, 4.7 mΩ•cm2 High Power 4H-SiC Bipolar Junction Transistor Authors: Jian Hui Zhang, Jian Wu, Petre Alexandrov, Terry Burke, Kuang Sheng, Jian H. Zhao |
1417 |
|
2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development Authors: Anant K. Agarwal, Sei Hyung Ryu, Ranbir Singh, Olof Kordina, John W. Palmour |
1387 |
|
300ºC SiC Blocking Diodes for Solar Array Strings Authors: E. Maset, Esteban Sanchis-Kilders, Pierre Brosselard, Xavier Jordá, Miquel Vellvehi, Phillippe Godignon |
925 |
|
300ºC Silicon Carbide Integrated Circuits Authors: Zachary Stum, Vinayak Tilak, Peter A. Losee, Emad A. Andarawis, Cheng Po Chen |
730 |
|
Authors: Jim Richmond, Sei Hyung Ryu, Sumi Krishnaswami, Anant K. Agarwal, John W. Palmour, Bruce Geil, Dimos Katsis, Charles J. Scozzie |
1445 |
|
4H-SiC Gate Turn-Off (GTO) Thyristor Development Authors: Jeff B. Casady, Anant K. Agarwal, L.B. Rowland, R.R. Siergiej, S. Seshadri, S. Mani, J. Barrows, D. Piccone, P.A. Sanger, C.D. Brandt |
1069 |
|
4H-SiC Material for Hall Effect and High-Temperature Sensors Working in Harsh Environments Authors: Jean-Louis Robert, Sylvie Contreras, Jean Camassel, Julien Pernot, Sandrine Juillaguet, Lea Di Cioccio, Thierry Billon |
1435 |
|
4H-SiC MOSFETs with a Stable Protective Coating for Harsh Environment Applications Authors: Walter Daves, A. Krauss, V. Häublein, A.J. Bauer, L. Frey |
1089 |