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Articles by keyword: «High Voltage»

• 1,530V, 17.5mΩcm² Normally-Off 4H-SiC VJFET Design, Fabrication and Characterization
  Published in: Silicon Carbide and Related Materials 2003 (p1157)
• 10 kV Silicon Carbide Junction Barrier Schottky Rectifier
  Published in: Silicon Carbide and Related Materials 2007 (p951)
• 10 kV, 87 mΩcm² Normally-Off 4H-SiC Vertical Junction Field-Effect Transistors
  Published in: Silicon Carbide and Related Materials 2005 (p1187)
• 12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance
  Published in: Silicon Carbide and Related Materials 2007 (p1187)
• 12.9 kV SiC PiN Diodes with Low On-State Drops and High Carrier Lifetimes
  Published in: Silicon Carbide and Related Materials 2011 (p949)
• 1200-V, 50-A, Silicon Carbide Vertical Junction Field Effect Transistors for Power Switching Applications
  Published in: Silicon Carbide and Related Materials 2007 (p1047)
• 1400 V 4H-SiC Power MOSFETs
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p989)
• 1700 V SiC Schottky Diodes Scaled to 25 A
  Published in: Silicon Carbide and Related Materials 2000 (p675)
• 1836 V, 4.7 mΩ•cm² High Power 4H-SiC Bipolar Junction Transistor
  Published in: Silicon Carbide and Related Materials 2005 (p1417)
• 2 kV 4H-SiC Junction FETs
  Published in: Silicon Carbide and Related Materials 2001 (p1227)
• 4,340V, 40 mΩcm² Normally-Off 4H-SiC VJFET
  Published in: Silicon Carbide and Related Materials 2003 (p1161)
• 4H-SiC Bipolar Junction Transistors with Graded Base Doping Profile
  Published in: Silicon Carbide and Related Materials 2008 (p829)
• 4H-SiC Epitaxial Growth for High-Power Devices
  Published in: Silicon Carbide and Related Materials - 2002 (p131)
• A 13 kV 4H-SiC n-Channel IGBT with Low R_diff,on and Fast Switching
  Published in: Silicon Carbide and Related Materials 2007 (p1183)
• A 1cm × 1cm, 5kV, 100A, 4H-SiC Thyristor Chip for High Current Modules
  Published in: Silicon Carbide and Related Materials 2005 (p1397)