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Articles by keyword: «Homoepitaxial Growth»

• 3C-SiC(100) Homoepitaxial Growth by Chemical Vapor Deposition and Schottky Barrier Junction Characteristics
  Published in: Silicon Carbide and Related Materials 2001 (p275)
• 4H-SiC (11-20) Epitaxial Growth
  Published in: Silicon Carbide and Related Materials - 1999 (p189)
• 4H-SiC Epitaxial Growth on SiC Substrates with Various Off-Angles
  Published in: Silicon Carbide and Related Materials 2004 (p89)
• 6H-SiC Homoepitaxial Growth and Optical Property of Boron- and Nitrogen-Doped Donor-Acceptor Pair (DAP) Emission of 1º-Off Substrate by Closed-Space Sublimation Method
  Published in: Silicon Carbide and Related Materials 2005 (p263)
• Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles
  Published in: Silicon Carbide and Related Materials 2011 (p113)
• Development of a Practical High-Rate CVD System
  Published in: Silicon Carbide and Related Materials 2007 (p119)
• Effect of Additional Silane on In Situ H₂ Etching prior to 4H-SiC Homoepitaxial Growth
  Published in: Silicon Carbide and Related Materials 2006 (p85)
• Epitaxial Growth of (11-20) 4H-SiC Using Substrate Grown in the [11-20] Direction
  Published in: Silicon Carbide and Related Materials 2001 (p195)
• Epitaxial Layers Grown with HCl Addition: A Comparison with the Standard Process
  Published in: Silicon Carbide and Related Materials 2005 (p163)
• Experimental Observations of Extended Growth of 4H-SiC Webbed Cantilevers
  Published in: Silicon Carbide and Related Materials 2005 (p247)
• Gaseous Etching Effects on Homoepitaxial Growth of SiC on Hemispherical Substrates Using CVD
  Published in: Silicon Carbide and Related Materials 2000 (p123)
• Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials 2005 (p191)
• Homoepitaxial Growth of 4H-SiC on Trenched Substrates by Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials 2003 (p189)
• Homoepitaxial Growth of 4H-SiC Thin Film Below 1000ºC by Microwave Plasma Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials 2001 (p299)
• Homoepitaxial Growth of Cubic Silicon Carbide by Sublimation Epitaxy
  Published in: Silicon Carbide and Related Materials 2001 (p279)