Papers by Keyword: Hopping Conductivity

Abstract: To ascertain physical mechanism of charge transport in Si/SiO_x structures with Ge nanoclusters the measurements of their DC and AC conductivity, and also the low-frequency measurements were performed. It was revealed that in the temperatures range 110 – 250 K the characteristics measured are governed by the hopping mechanism of charge transport. The model proposed suggests that the charge hopping becomes possible due to the band of localized states inducing in the bandgap of silicon substrate when Ge nanoclusters are introduced. The model was used to estimate some parameters of hopping transport. Also, the analysis of the low-frequency noise measured for Si/SiO_x structures with Ge nanoclusters allowed to ascertain the mechanism of charge hopping resulting in strong temperature dependence of the 1/f noise measured.

Abstract: The low temperature studies of SOI-structures have been carried out in a temperature range of 4.2÷300K at magnetic fields up to 14T. The samples with initial boron concentration of about 2.410¹⁸сm^-3 have been investigated. The results of the studies of SOI-structure conductance at low temperatures in the range of hopping conductance and a possibility to use this material in sensors are analyzed.