Papers by Keyword: ICP

Abstract: This work presents the results of process development for trench formation in SiC power devices to increase the trench depth by improving SiC/SiO₂-selectivity of the dry etch process. Motivation behind this development is to further improve the electrical properties of conventional devices like SiC MOSFETs by implementing a trench geometry, allowing the cell pitch to be increased, leading to a reduced on-resistance of SiC TrenchMOS devices. Trench etching was performed on 4H-SiC substrates by utilizing an oxide hard mask, patterned by photolithography and dry etching. The SiC trench profile was analyzed by cross-section preparation via FIB and SEM imaging. The highest SiC/SiO₂-selectivity achieved was 7.9, with SiF₄ gas flow being the most decisive parameter for it. With that, the selectivity of the standard SiC trench etch process was increased by nearly five times. SiC trenches with depths of 5 µm could be demonstrated. However, then the structural fidelity was deteriorated, with micro-trenching and sidewall bowing being the largest limitations regarding applicable trench depth in SiC power devices.

Abstract: Effective control of device geometry is key to mitigating high localized electric fields in next-generation SiC power devices. Advanced trench processing allows for highly tunable trench-gate architectures in trench MOSFETs. By utilizing a two-step inductively coupled plasma reactive ion etch (ICP-RIE) process, a high degree of trench base corner rounding can be achieved, irrespective of trench opening corner geometry prior to post etch treatments. Sentaurus TCAD device modelling highlights the importance of effective electric field dispersion at the gate oxide using rounded trench corners, while I-V characterization of fabricated trench MOS-capacitor devices demonstrate the influence of trench base corner rounding on gate oxide breakdown.

Abstract: In order to develop a new air cell cathode, the mixed with Mg alloy and zinc powder as anode material of a kind of button battery was proposed in the research work. In this paper, the ion concentration results of corrosion solution by ICP measurement was used electrochemical simulation by FACSIMILE for evaluating mechanism of corrosion reactions for Mg alloy and Zn mixed button cell.

Abstract: Springback effects, as occuring in sheet metal forming processes, pose a challenge to manufacturingplanning: the as-built part may deviate from the desired shape rendering it unusable forits intended purpose. A compensation can be achieved by modifying the forming tools to counteractthe shape deviations. A prerequisite to compensation is the knowledge of correspondences (u_i; v_j),between points u_i on the desired and v_j on the actual shape. FEM-based simulation software providesmeans to both virtually predict springback and directly obtain correspondences. In case of experimentalprototyping and validation, however, finding correspondences requires solving a registrationproblem: given a test shape Q (scan points of the as-built geometry) and a reference shape R (CADdata of the desired geometry), a transformation S has to be found to fit both objects. Correspondencesbetween S(Q) and R may then be computed based on a metric.If S is restricted to Euclidean transformations, then S(Q) results in a rigid transformation, whereevery point of Q is subject to the same translation and rotation. Local geometric deviations due tospringback are not considered, often resulting in invalid correspondences. In this contribution, a nonrigidregistration method for the efficient analysis of springback is therefore presented. The test shape Q is iteratively partitioned into segments with respect to an error metric. The segments are locally registeredusing rigid registration subject to regulatory conditions. Resulting discontinuities are addressedby minimization of the deformation energy. The error metric uses information about the deviationscomputed based on the correspondences of the previous iteration, e.g. maximum errors or changes ofthe sign. This adaptive per-segment registration allows appropriate correspondences to be determinedeven under local geometric deviations.

Abstract: In this work, we present a planarization concept for epitaxial SiC trench structures involving reactive ion etching (RIE) and inductive coupled plasma (ICP) dry etching. The general idea is to transfer the flat surface from spun-on BCB/photo-resist layers to deposited silicon dioxide and finally to bulk SiC by applying process conditions with the same etch rate for the different materials. In this way several microns of unwanted material can be removed and planar SiC surfaces are obtained. With this method trench structures filled by epitaxial re-growth can be planarized with smooth surfaces and good homogeneity over the wafer. Cost-efficient device manufacturing can be achieved by using standard semiconductor process equipment. This technology makes it possible to manufacture advanced epitaxial SiC material structures for devices such as trench JBS diodes and double-gate trench JFETs.

Abstract: TSV is a new technology to make interconnections between chips by creating vertical wafer-to-wafer vias. The application of ICP ( inductively coupled plasma ) dry etching to make TSV is discussed in this paper. Starting with hardware conditions of the equipment, a large number of experiments were conducted to test the process parameters combining with the fundamentals of dry etching. By constantly modifying the parameters to optimize the process, a final result of TSV with the width of 2.62um, depth of 63.5um, verticality of 89.8°and scallop of 70.3nm was realized in this paper.

Abstract: In order to uncover truths to serve justice, case-related data collected from a digital investigation requires substantial resources to analyze, especially in time-critical situations. At present, however, digital forensics has not evolved to meet this ever-increasing demand. Digital forensic triage is a promising solution, as it is designed to maximize the use of resources according to a system of priorities, and hence the efficiency and effectiveness of forensic examinations can be increased. Nevertheless, the lack of concrete methods limits efforts to implement triage. This paper presents a practical approach that is designed to build a prioritizing solution. In this work a newprocess model is derived based on the presented approach, and it is particularly suited to scenarios where forensic examiners do not have enough time and resources to conduct a full examination and analysis. An example is described to demonstrate how this approach can be used to meet the requirements of network forensic investigations.

Abstract: The principle of registration of the 3D point cloud data and the current algorithms are compared, and ICP algorithm is chosen since its fast convergence speed, high precision, and simple objective function. On the basis of ICP algorithm, singular value decomposition and four-array method are analysed by programming program, and all the mathematical algorithms is transformed into programming language by Matlab software.

Abstract: A new solid proton conductor Na7[CoCrW11O39 (H2O)]·15H2O has been synthesized for the first time. The percentage composition of the product were determined by inductively coupled plasma (ICP) and X-ray photoelectron spectroscopy (XPS). The product was characterized by infrared spectroscopy (IR) and X-ray diffraction (XRD), which indicate it possesses the Keggin structure. The TG-DTA curve shows the sequence of water loss in the compound, the amount of the loss, as well as the thermostability. Conductivity of the compound was investigated by four-electrode method at room temperature and different measuring temperatures, the results reveal that its proton conductivity is 9.42×10−7S·cm-1 at 25°C.

Abstract: This paper proposes a 3D point cloud registration method based on light detection and ranging (LiDAR) system. The proposed method consists of three steps: Gaussian-Process based ground segmentation, a novel k-neighbors based dynamic point feature and Iterative Closest Point (ICP) fine registration. The first two steps are the preparation of ICP fine registration. The odometry information from a GPS/IMU system is used to compensate the vehicle's ego-motion. The Gaussian-Process based ground segmentation is adopted to remove ground points. A novel Initial Localization based Dynamic Feature (ILDF) is proposed to detect and remove dynamic points. It is applicable in sequential frames and a proper initial localization without a large dislocation. In experiment results, a large number of dynamic points will be detected and removed by ILDF. The removal of dynamic points improves both accuracy and efficiency of registration algorithm.