HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by keyword: «ICP-MS»

• Determination of Arsenic (III) and Arsenic (V) Species by Preconcentration and Inductively Coupled Plasma Mass Spectrometry (ICP-MS) in Drinking Water Samples Analysis
  Published in: Advances in Materials and Processing Technologies II (p1684)
• Determination of Cadmium in Bivalve Molluscs by Microwave Digestion with Inductively Coupled Plasma-Mass Spectrometry
  Published in: Advanced Measurement and Test (p569)
• Determination of Effective Diffusion Coefficient of Copper in Silicon by Diffusion from Bulk into the Polysilicon Backside
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p385)
• Determination of Heavy Metals in Fruits of Capsicum Annuum L. by Inductively Coupled Plasma Mass Spectrometry
  Published in: Advanced Design and Manufacture IV (p135)
• Determination of Heavy Metals in Rhizomes of Alpinia galanga by Inductively Coupled Plasma Mass Spectrometry
  Published in: Advanced Design and Manufacture IV (p143)
• Evaluation of Ultratrace Metallic Elements in Poly-SiGe Thin Films
  Published in: Ultra Clean Processing of Silicon Surfaces VI (p97)
• ICP/MS in Evaluation Heavy Metal Influence on the Behavior of Natural Temporary Teeth
  Published in: Bioceramics 21 (p175)
• Inorganic Chemical Composition of Atmospheric Particulate Matter around Industrial Sites in Northern Lebanon
  Published in: Advances in Innovative Materials and Applications (p477)
• Investigation of Trace Metals Analyses of Dry Residue on Silicon Wafer Surfaces by TXRF and ICP-MS
  Published in: Ultra Clean Processing of Silicon Surfaces V (p75)
• Metallic Ion Release from Titanium Alloy and Stainless Steel Coated with Electrolytic Calcium Phosphate (HA)
  Published in: Bioceramics 20 (p729)
• Study of Gettering Mechanisms in Silicon: Competitive Gettering between Phosphorus Diffusion Gettering and Other Gettering Sites
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p399)
• Study of the Etching Mechanism of Heavily Doped Si in HF
  Published in: Ultra Clean Processing of Semiconductor Surfaces X (p41)