Papers by Keyword: IGCT

Abstract: A challenge in the development of Silicon carbide (SiC) gate turn-off thyristors lie in an uneven transient behaviour, necessitating expensive snubbers. To address these limitations and simplify circuit topology we present an optimized 16 kV n-type SiC integrated gate commutated thyristor (IGCT) design, which utilises a novel highly doped base strip (HDBS). A particular focus is on optimizing the gate commutation of the GCT during switching, and the trade-offs in the HDBS base design were investigated. The findings reveal that compared with conventional GCT design, the HDBS design under high current conditions recorded a 11.8% reduction in turn-off power losses. When simulating the device in a high-voltage scenario, the HDBS IGCT demonstrated a 3.9% reduction in turn-off power losses and an improved turn-on power loss performance. This resulted in a reduction of power losses by 12.1% and 2.3% in high current and high voltage conditions, respectively. In summary, the novel SiC HDBS IGCT design paves the way towards a secure, high current density, and low loss switching SiC thyristor device.

Abstract: IGCT is a kind of new type power electronic device which developed from GTO and IGBT . In this paper, Author based on analysis of the internal structure of GTO, shows how GTO development IGCT through technical methods.Through simulation of its off and on performance, the work curve and comparing results of the two devices are given. Then on two components of the inverter circuits are analyzed and compared. Thinking in large power AC drive locomotive, IGCT inverter is greatly simplifier than GTO inverter circuit, and superior performance,it will become the main converter for AC driving locomotive.