Papers by Keyword: ITO

Abstract: Graphene Oxide (GO) is two dimensional material that has been widely studied as an electrode material for supercapasitor. We prepared thin films of GO on metal oxide substrate of indium tin oxide (ITO) and metal substrate of Copper (Cu) using electrochemical deposition technique from 0.5 mg/ml GO dispersed in water. ITO-GO film was prepared using voltage range of -1.6 V to 0 V (ITO) and Cu-GO film was prepared using voltage range of 0 V to 1 V at scan rate of 50 mV/s. Both samples were characterized using Cyclic Voltammetry (CV) measurements in 1 M KCl electrolyte at varied scan speed with platinum (Pt) as counter electrode and Ag/AgCl as reference electrode. We compare energy storage characteristics of ITO-GO and Cu-GO using cyclic voltammogram data. It is found that GO deposited in metal substrate of Cu has higer energy density compare to that deposited in metal oxide substrate of ITO.

Abstract: In this work, the reaction and nucleation mechanisms of the electrochemical deposition of copper on an indium-doped tin oxide (ITO) conductive glass substrate in a sulfate solution were characterized respectively by electrochemical methods Such as: cyclic voltammetry and chronoamperometry.The transients (current-time) obtained were analyzed by the model of Scharifker and Hills. The deposited copper layer can be described by a model involving instantaneous nucleation at active sites and diffusion controlled 3D growth. The values of the diffusion coefficient D for the Cu^{2 +} ions are also calculated. Electrochemical techniques were followed by morphological characterizations with atomic force microscopy (AFM).All experiments were carried out in an acid solution at pH 4.

Abstract: Indium is widely used in some important fields due to its semiconductor and optoelectronic performance. While the reduction of indium minerals, as one of secondary resources, the amount of indium–tin oxide (ITO) waste target has been accumulated considerably. ITO film is the main functional fraction of LCD has consumed more than 60% of the indium production worldwide. Therefore, it is necessary to recycle indium from ITO waste. Some researchers have been done for proper treatment to recycle indium from ITO waste. In this paper, the extraction methods of indium from ITO waste target are introduced, and the advantages and disadvantages of each method are compared.

Abstract: In this paper, a method for determining the doping efficiency of dispersed semiconductor metal oxide materials is proposed proposing to use the dependences of the free charge carrier concentration, normalized to the concentration of the doping impurity (N_{e spec.}), on the content of this impurity. The possibilities of this method are demonstrated by the example of studying the effect of technological factors on the efficiency of doping of indium oxide with tin and doping of tin oxide with antimony. It is shown that it is impossible to achieve the concentration of free charge carriers in the ITO material, higher than that in ATO materials, due to the lower solubility of tin in the In₂O₃ lattice, as compared with the solubility of antimony in the SnO₂ lattice.

Abstract: Indium tin oxide (ITO) nanoparticles (NPs) were prepared by a coprecipitation process from a mixed solution consisting of indium chloride and tin chloride. The surface plasmon resonance (SPR) absorption was studied under different calcinate atmospheres. The characteristics of the optical properties, especially the absorption of near-infrared (NIR) region was recorded by the UV-Vis-NIR absorption spectroscopy. The results show that the SPR absorption peak appears at 2500 nm under an oxidizing atmosphere (air) or at 1300 nm under a reducing atmosphere (a gas mixture of Ar and 5 vol% H₂) when calcinated under a single atmosphere. There is no change in the plasmon frequency with the variance of calcinate temperatures and therefore no change in the free carrier concentration. However, when calcinated first at 600 °C under an oxidizing atmosphere and then reheated under a reducing atmosphere at different temperature, the SPR absorption peaks of the ITO NPs are at the range of from 1200 nm to 1430 nm, undergoing a blue shift as the reducing process temperature increases. The SPR absorption of the prepared ITO NPs is easily controlled by calcinate temperature under a process of calcination first under an oxidizing atmosphere and followed by under a reducing atmosphere.

Abstract: SAW sensing technology has advantages of wireless, passive, small size, low cost, fast response, strong anti-electromagnetic radiation, measurable for moving or rotating objects, tolerable for wet dirty or high temperature and other harsh environments. Comparing with the traditional sensing methods, the test of SAW sensing technology can cover almost all the needs of digital substation internet of things.

Abstract: The PCE has a great relationship with the work function of conductors in organic and printed electronics devices. And organic photovoltaics require an electrode with a work function (WF) that is low enough to either facilitate the transport of electrons in and out of various optoelectronic devices or collect electrons from the lowest unoccupied molecular orbital (LUMO) of a given organic semiconductor. In inverted organic photovoltaics, the ITO is normally used as cathode to collect electrons .By using PDDA deposition, the surface work function of ITO can be decreased by 0.3 eV, which is able to improve the electrons transport and the PCE in OPV, as it has been proved that the surface electronic potential of ITO is very sensitive to the presence of self-assembled molecular layers.

Abstract: A study on the resistance of directly sputtered films and treated films of Indium Tin Oxide (ITO) is done to initiate an extensive study on the material. This study involves variation in terms of number of layers and duration of deposition. Treated films are produced by undergoing annealing process which is carried out using Split Type Tube Furnace. Resistance measurements were carried out using Semiconductor Parametric Analyzer (SPA). Results show that the directly sputtered ITO films produced lower resistance compared to the treated ITO films.

Abstract: Preliminary analysis has been done on the reflectance of sputtered Indium Tin Oxide (ITO) layers. The analysis is done for two different types of layers which is the directly sputtered ITO films and the treated ITO films. In both type of the film it is divided into the thickness of the layer and deposition time. Analysis is done using Perkin Elmer Lambda 950 UV/Vis/NIR Spectrophotometer. The working spectral range is from 250 nm to 800 nm (for transmittance), covering the ultra-violet (UV) and visible spectrum. Results shows thatthe directly deposited thin ITO films had lower reflectance compared to the thick films. The reflectance of the thick films with three and four layers was high (95%) compared to the rest of the films. The treated films produce very low reflectance.

Abstract: This paper summarize the transparent conductive oxide (TCO) market application of aluminum doped most widely used in the film Zinc Oxide AZO and ITO thin films and the development trend is prospected. Reports the photoelectric properties of ITO films requirements, prepared on flexible substrate ZnO films on the substrates, preparation technology and development, summarizes the latest research achievements in this field and the present problems, which describes the next step of work in the domain.