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Articles by keyword: «Implantation»

• (Nitrogen-Vacancy)-Complex Formation in SiC: Experiment and Theory
  Published in: Silicon Carbide and Related Materials 2006 (p307)
• 3.3 kV Rated Silicon Carbide Schottky Diodes with Epitaxial Field Stop Ring
  Published in: Silicon Carbide and Related Materials 2010 (p555)
• 4H-SiC Self-Aligned Implant-Diffused Structure for Power DMOSFETs
  Published in: Silicon Carbide and Related Materials - 1999 (p1275)
• 6A, 1kV 4H-SiC Normally-Off Trenched-and-Implanted Vertical JFETs
  Published in: Silicon Carbide and Related Materials 2003 (p1213)
• A 600V Deep-Implanted Gate Vertical JFET
  Published in: Silicon Carbide and Related Materials 2003 (p1217)
• A Comparative Analysis of Structural Defect Formation in Si⁺ Implanted and then Plasma Hydrogenated and in H⁺ Implanted Crystalline Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p309)
• Abnormal Redistribution of S Atoms Implanted into GaAs during Si Thermal Doping
  Published in: Beam Injection Assessment of Microstructures in Semiconductors (p313)
• Accumulation of Hydrogen within Implantation-Damaged Areas in Processed Si:N and Si:O
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p319)
• Accurate CsM⁺ SIMS Aluminum Dopant Profiling in SiC
  Published in: Silicon Carbide and Related Materials 2005 (p629)
• Aluminium Implantation Induced Linear Surface Faults in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2004 (p613)
• Analysis of Strain and Defect Formation of Low-Dimensional Structures in SiC
  Published in: Silicon Carbide and Related Materials 2000 (p259)
• Annealing of Implanted Layers in (1-100) and (11-20) Oriented SiC
  Published in: Silicon Carbide and Related Materials 2001 (p773)
• Biocompatibility of Phema and P(Hema-Co-Sma) Hydrogels
  Published in: On the Convergence of Bio-, Information-, Enrivonmental-, Energy-, Space- and Nano-Technolgies (p51)
• Buried Insulating Layer Formation in Cz Si Wafers after Helium Implantation, Nitrogen Plasma Treatment and Annealing
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p91)
• Buried Nano - Structured Layers in High Temperature – Pressure Treated Si:He
  Published in: High Pressure Technology of Nanomaterials (p285)