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Articles by keyword: «InGaN»

• Advanced Real Time Metrology of AlGaN/GaN and InGaN/GaN Epitaxy
  Published in: 5th FORUM ON NEW MATERIALS PART D (p124)
• Calculations of Equilibrium Critical Thickness for Non-Polar Wurtzite InGaN/GaN Systems
  Published in: Materials Structure & Micromechanics of Fracture V (p209)
• Characterization of V-Defects in InGaN Single-Quantum-Well Films at Nanometer Level by High Spatial Resolution Cathodoluminescence Spectroscopy
  Published in: Silicon Carbide and Related Materials 2007 (p1305)
• Correlation between Screw Dislocations Distribution and Cathodoluminescence Spectra of InGaN Single Quantum Well Films
  Published in: Silicon Carbide and Related Materials 2007 (p1309)
• Direct Imaging of the Crystalline and Chemical Nanostructure of GA,IN-Nitrides by Highly Spatially-, Spectrally- and Time-Resolved Cathodoluminescence
  Published in: Beam Injection Assessment of Defects in Semiconductors (p221)
• Effect of Elastic Strain on Growth of Ternary Group-III Nitride Compounds
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1189)
• Effect of Growth Temperature on the Indium Incorporation in InGaN Epitaxial Films
  Published in: Applications of Engineering Materials (p1456)
• Effect of Nitridation on Indium-Composition of InGaN Films
  Published in: Materials Integration (p193)
• Electroluminescence of III-Nitride Double Heterostructure Light Emitting Diodes with Silicon and Magnesium Doped InGaN
  Published in: Defects in Semiconductors 19 (p1229)
• MOCVD Growth and Properties of InGaN/GaN Multi-Quantum Wells
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1157)
• Optimization of InGaN Based Light Emitting Diodes
  Published in: Functional Materials and Devices (p195)
• Photoluminescence and Electroluminescence Characterization of In_xGa_1-xN/In_yGa_1-yN Multiple Quantum Well Light Emitting Diodes
  Published in: Silicon Carbide and Related Materials 2001 (p1493)
• Photoluminescence and Raman Scattering Characterization of GaN, InGaN and AlGaN Films Using a UV Excitation Raman-Photoluminescence Microscope
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1359)
• Prospects of Potential Semiconductor Spin Detectors
  Published in: Advances in Nanomaterials and Processing (p839)
• Quantum Confinement Stark Effect in InGaN SQW Studied by Electric Field Modulated PL Spectra
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1307)