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Keyword: "InGaN"

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1

Paper Title	Page
Advanced Real Time Metrology of AlGaN/GaN and InGaN/GaN Epitaxy Authors: Tong Ho Kim, Soo Jeong Choi, April S. Brown, Maria Losurdo, Giuseppe Valerio Bianco, Maria M. Giangregorio, Giovanni Bruno	124
Calculations of Equilibrium Critical Thickness for Non-Polar Wurtzite InGaN/GaN Systems Authors: D. Holec, Colin J. Humphreys	209
Characterization of V-Defects in InGaN Single-Quantum-Well Films at Nanometer Level by High Spatial Resolution Cathodoluminescence Spectroscopy Authors: Masanobu Yoshikawa, Masataka Murakami, Takaya Fujita, K. Inoue, K. Matsuda, H. Ishida, Hiroshi Harima	1305
Compositional and Structural Characterization of Heterostructure InGaN-Based Light-Emitting Diode by High Resolution X-Ray Diffraction Authors: Ahmad Hadi Ali, Ahmad Shuhaimi, Zainuriah Hassan, Yushamdan Yusof	22
Correlation between Screw Dislocations Distribution and Cathodoluminescence Spectra of InGaN Single Quantum Well Films Authors: Takaya Fujita, Takeshi Mitani, Masataka Murakami, Masanobu Yoshikawa, Hiroshi Harima	1309
Direct Imaging of the Crystalline and Chemical Nanostructure of GA,IN-Nitrides by Highly Spatially-, Spectrally- and Time-Resolved Cathodoluminescence Authors: D. Rudloff, F. Bertram, T. Riemann, J. Christen, T. Böttcher, H. Selke, D. Hommel, K. Hiramatsu	221
Effect of Elastic Strain on Growth of Ternary Group-III Nitride Compounds Authors: S.Yu. Karpov, Yuri N. Makarov, M.S. Ramm	1189
Effect of Growth Temperature on the Indium Incorporation in InGaN Epitaxial Films Authors: P. C Chang, C. L Yu, Y. W Jahn, S. J Chang, K. H Lee	1456
Effect of Nitridation on Indium-Composition of InGaN Films Authors: Jung Hun Choi, Suresh Kumar, Shi Yang Ji, Shojiki Kanako, Takashi Hanada, Ryuji Katayama, Takashi Matsuoka	193
Electroluminescence of III-Nitride Double Heterostructure Light Emitting Diodes with Silicon and Magnesium Doped InGaN Authors: Adam W. Saxler, K.S. Kim, D. Walker, P. Kung, Xue Ren Zhang, G.J. Brown, W.C. Mitchel, M. Razeghi	1229

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