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CONFERENCE
6/16/2013 - 6/19/2013
The 7th International conference on Physical and Numerical Simulation of Materials Processing
5/16/2013 - 5/19/2013
2nd International Congress on Advanced Materials
4/13/2013 - 4/14/2013
2013 2nd lnternational Conference on lntclligent Materials, Applied Mechanics and Design Science (IMAMD 2013)
more...
Articles by keyword: «
InP
»
50 papers on 4 pages:
1
[2]
[3]
[4]
[next]
A Sharp Defect-Annealing Stage Below Room Temperature in Irradiated N-Type Indium Phosphide
Published in:
Defects in Semiconductors 19
(p837)
Alpha Radiation-Induced Deep Levels in p-InP
Published in:
Defects in Semiconductors 19
(p843)
An Optical Zeeman Study on Fe
3+
in GaAs and InP
Published in:
Defects in Semiconductors 17
(p797)
Category II and Category III Defects in 200 KEV Fe Implanted InP
Published in:
Defects in Semiconductors 18
(p1273)
Characteristics of Self-Aligned InP/InGaAs Heterojunction Bipolar Transistor Assisted by Silicon Nitride Sidewall
Published in:
Advances in Nanomaterials and Processing
(p97)
Characterization of Electron Traps in n-InP Induced by Hydrogen Plasma
Published in:
Defects in Semiconductors 18
(p1973)
Classical Molecular Dynamics Simulation of Structural and Dynamical Properties of II-VI and III-V Semiconductors
Published in:
Diffusion in Solids and Liquids
(p522)
Damage Production in Ion Implanted III-V Compounds: A Comparative Study
Published in:
Materials Science Applications of Ion Beam Techniques
(p261)
Deformation-Induced Vacancy Clusters in InP Studied by Positron Annihilation
Published in:
Positron Annihilation - ICPA-9
(p1061)
Deuterium Effusion from InP
Published in:
Defects in Semiconductors 17
(p945)
Diffusion of Zinc in InP, InAsP and InGaAs by the Metal-Organic Vapor-Phase Diffusion Technique
Published in:
Defects and Diffusion in Semiconductors
(p153)
Doping and Characterisation of Nanocrystalline Materials
Published in:
Doped Nanopowders
(p61)
Electronic Structure and Positron Trapping in Semiconductors
Published in:
Positron Annihilation - ICPA-10
(p279)
Electronic Structure of P
In
Antisite in InP
Published in:
Defects in Semiconductors 17
(p211)
Enhancement of the Third Harmonic Generation Efficiency in n-Type Si and InP by Cooling from Room Temperature to 80K
Published in:
Ultrafast Phenomena in Semiconductors
(p315)
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