Papers by Keyword: Indium

Abstract: Tin oxide (SnO₂) thin film is a form of modification of semiconductor material in nanosize. The thin film study aims to analyze the effect of triple doping (Aluminum, Indium, and Fluorine) on the optical properties of SnO₂: (Al + In + F) thin films. Aluminum, Indium, and Fluorine as doping SnO₂ with a mass percentage of 0, 5, 10, 15, 20, and 25% of the total thin-film material. The addition of Al, In, and F doping causes the thin film to change optical properties, namely the transmittance and absorbance values ​​changing. The transmittance value is 67.50, 73.00, 82.30, 87.30, 94.6, and 99.80 which is at a wavelength of 350 nm for the lowest to the highest doping percentage, respectively. The absorbance value increased with increasing doping percentage at 300 nm wavelength of 0.52, 0.76, 0.97, 1.05, 1.23, and 1.29 for 0, 5, 10, 15, 20, and 25% doping percentages, respectively. The absorbance value is then used to find the gap energy of the SnO₂: (Al + In + F) thin film of the lowest doping percentage to the highest level i.e. 3.60, 3.55, 3.51, 3.47, 3.42, and 3.41 eV. Thin-film activation energy also decreased with values of 2.27, 2.04, 1.85, 1.78, 1.72, and 1.51 eV, respectively for an increasing percentage of doping. The thin-film SnO₂: (Al + In + F) which experiences a gap energy reduction and activation energy makes the thin film more conductive because electron mobility from the valence band to the conduction band requires less energy and faster electron movement as a result of the addition of doping.

Abstract: The manufacture of a thin layer of SnO₂: (Al + F + In) was carried out by using the sol-gel spin coating method on a glass substrate with various temperatures (25, 50, 100, 150, and 200 °C).The purpose of this study is to determine the optical properties of thin layers which include transmittance, absorbance, band gap energy and activation energy. The optical properties of the coating were characterized using a UV-Vis spectrophotometer with a wavelength of 200-1100 nm. The results showed that the absorbance value increased with increasing temperature at a wavelength of 300 nm. The absorbance values ​​obtained for temperature variations were in the percentages of 95: 5% and 75: 25%, respectively 3.46-4.50 and 3.96-5.76. The transmittance value obtained increased, namely 73.00-86.30% and 74.20-99.30%. In addition, the energy band gap decreased from 3.60-3.41 eV and 3.57-3.31 eV for direct allowed, while 3.69-3.58 eV and 3.65-3.54 eV for indirect allowed. Activation energy decreased from 2.00-1.18 eV and 1.60-1.12 eV. In general, the absorbance and transmittance values ​​increase with increasing ripening temperature and the addition of doping aluminum, fluorine, and indium, while the bandgap energy and activation energy values ​​obtained decrease with increasing ripening temperature and increasing the doping percentage of aluminum, fluorine, and indium. The decrease in the value of the bandgap energy and the activation energy can make it easier for electrons to move from the valence band to the conduction band so that the material is slightly conductive and acts as a semiconductor.

Abstract: The FAME (Flexible and Mobile Economic Processing Technologies) project targets the development of flexible and economic processing technologies for small and low-grade European ore deposits with complex mineralogy, targeting greisen, skarn and pegmatite ores. Amongst the valuable elements to be recovered are W, Sn, Li and minor constituents like In, Ge, Ga, Nb or Ta. To improve the processing of by-product sulfides to recover critical elements like In or Ga and to develop innovative processing strategies for raw materials, biohydrometallurgical technologies are investigated. There are different approaches in FAME for the biohydrometallurgical recovery of valuable metals from low grade ores: 1) the extraction of Li from zinnwaldite and lepidolite, 2) the heap leaching of low grade sulfide ore unsuitable for conventional processing to recover Zn and In, and 3) the bioleaching of sulfide concentrates in a two-stage tank process for recovery of Zn and Cu. So far the most promising results were achieved for heap-leaching of low-grade Zn-In ores achieving 7.4 ppm In in the leaching solution and for Li extraction (28%) from zinnwaldite.

Abstract: Using a commercially available solvent impregnated resin, Lewatit TP272, in an ion exchange process, it was possible to extract up to 90 % indium from a feed containing as little as 1 mg/L indium in the presence of high amounts of impurities, i.e. 1000 mg/L iron and zinc each. It was demonstrated that through gradient regeneration of obtained loaded ion-exchange resin, it is possible to yield a solution containing as much as 400 mg/L indium along with 400 mg/L iron, thereby upgrading its purity more than 600 times. Moreover, it was shown that this solution can be fed into an existing solvent extraction procedure which would yield an indium oxide with more than 99 % purity.

Abstract: Electrolytic deposit of indium, platinum and platinum-indium alloy on the surface of graphite electrodes has been studied using the scanning electron microscopy and the stripping voltammetry. The scanning electron microscopy method has revealed that platinum-indium alloy on the surface of the graphite electrode contains indium, platinum and chlorine. But platinum is unable to be determined on the surface of the graphite electrode without a metal activator due to its precipitation in very small quantities. Under the anodic oxidation of indium-platinum precipitation, the anodic peaks caused by the selective electro-oxidation of indium from the intermetallic compounds with platinum are observed on the current-voltage curves. Wherein, platinum remains on the electrode surface, and can be oxidized from the electrode at the potentials of the electrode purification (more than 1 V).

Abstract: Feasibility of pure indium and solders containing high amount of indium as 70In30Sn to wet the different types of metallic and ceramic materials at application of power ultrasound was studied. The shear strength of soldered joints fabricated on metallic (Cu, Ni, Al, Ti, AISI 316 steel) and ceramic substrates was assessed. The shear strength of In solders on Al₂O₃ and SiC ceramic materials varied from 3.5 to 7 MPa. The shear strength on metallic materials attained from 12.5 to 71 MPa. Joint fracture in most cases occurred in the solder and was of ductile character. Failure took place by shear mechanism.

Abstract: The present work investigated the transfer regularity of Fe (III)-Al (III) in the extraction of indium from waste TFT-LCD. The result showed that Fe (III)-Al (III) is extracted by D2EHPA in the extraction process of indium. Therefore by controlling extraction time, the amount of iron and aluminum declined in the extractant. During extraction in D2EHPA, the content of iron and aluminum was affected by acidity and coexisting anions. The iron and aluminum accumulating in D2EHPA could cause aging extractant, which made an impact on loading capacity of the extractant.

Abstract: With the rapid development of the technology of liquid crystal display, LCDs have become the main stream displays. However, if there are no appropriate ways to recycle the discarded LCDs, the environment will be polluted and the resources will be wasted. TFT-LCD panels mainly consist of the color filter (CF) substrate and the thin film transistor (TFT) substrate which both have a surface covered with indium-tin oxide (ITO). ITO layer contains the metal of indium which is rare, precious and of high value. In view of the difference of the structure and material of the CF substrate and TFT substrate, an efficient and green process has been presented for recycling the indium by means of theoretical analysis and experimental verification. Under heating condition, the sodium hydroxide solution is used to dissolve the color filter of the CF substrate and the ITO layer attached to the color filter can be eliminated quickly and the metal indium can be enriched by filtering solution. By grinding the ITO layer on the TFT substrate with the aid of water-proof sand paper and collecting ITO scraps, indium can also be enriched quickly. The experiments show that the indium content of the CF substrate and TFT substrate are both quite low. Enriching indium on the premise of not dissolving indium is beneficial to the concentrated recovery of indium and is helpful to raise the recycling efficiency and protect the environment.

Abstract: A measurement of the angular velocity/revolution number of magnetically stirred liquid gallium-indium alloy was realized with newly developed angular velocity measuring equipment. To get additional information about the flow of the melt, a numerical simulation model was performed with ANSYS FLUENT 13.0 with a single phase 2D k-ε turbulence solver. The aim was to reproduce the flow as accurate as possible, so the measured and computed angular velocity data was compared, to see if the system can be modeled fairly well.

Abstract: Sulfuric Acid precure Pressure-atmospheriation leaching process from tin dust was studied. The factors had been investigated,which effects indium leaching rate,the factors are :the sulfuric acid initial temperature, curing time of heat, acid dosage, leaching reaction time, leaching temperature, the liquid-solid ratio and so on.The results show that the indium, zinc and tin leaching rate can be 96.68%, 97.70% and 0.52%,while pressure-atmospheriation leaching is carried out under the initial temperature 140°C,sulfuric acid, the time of heat aging 40 min, acid dosage and tin of tobacco smoke mass ratio0.7:1, leaching time 1.5h, leaching temperature 90°C,and the liquid-solid ratio 4:1 conditions.