Papers by Keyword: Indium Tin Oxide

Abstract: This contribution is the second part of a presentation of transparent conductive oxides, TCO. After a general overview in the first publication of properties and applications of TCO related to the type of oxide and dopant, the growth techniques and the temperature, we focus in the current one on three families of TCO used as transparent electrodes in photovoltaic, PV, cells and modules. Indeed, new generations of solar cells need optimizing TCO with improved conductivity and transparency depending on substrate, type of PV cells, and conditions of used. Thus, ITO, ZnO-AZO, and SnO₂-FTO TCO families are considered. ITO presents the best combination of electrical and optical properties but TCO based on the two other families are challenging in many photovoltaic applications for obtaining low cost and environmental friendly electrodes with comparable performances. Due to the high number of publications on TCO for PV applications, this contribution does not claim to be exhaustive but makes it possible to summarize the main information concerning these materials by approaching them in a common methodology.

Abstract: In this work, we synthesize Hafnium (IV) oxide (HfO₂) ink from hafnium chloride (HfCl₄) powder assisted with deionized water. The poly acrylic acid (PAA) is used as surfactant to decrease the surface tension. Conversion of HfCl₄ into HfO₂ was detected by Raman spectroscopy and energy dispersive X-ray spectroscopy (EDS) characterization techniques. This proposed ink can be easily synthesized at a low temperature. Using the synthesis ink, a liquid capacitor is proposed, which is tested for electrochemical analysis. Indium tin oxide (ITO) coated PET is used as bottom and top current collector electrode, polydimethylsiloxane (PDMS) mold is used as separator, and HfO₂ ink is used as aqueous electrolyte. Liquid capacitor is also tested on different bending diameters using bending machine from flat down to 10 mm bending curvature, which shows a stable capacitor function.

Abstract: Organic devices are advantageous in term of high carrier mobility, lightweight and flexibility. The solution processed method offers economic and efficient device fabrication in small laboratory scale. The α-quaterthiophene (α-4T) is an oligomer and a p-type organic semiconductor. In this study, pure α-4T and polylactide acid (PLA)/α-4T films were spin-coated on glass and indium tin oxide (ITO) substrates at low spin frequency. The hydrated films were left to dry at room temperature and later in vacuum oven. The α-4T microstructures changed when blended with the polymer. The roughness of the 180 nm ITO film was found to be 1 - 30 nm and the organic layer formed uneven thickness (max ~ 300 nm) thicker toward the edge. The preparation of spin coated organic thin film is the first step towards realizing solution processed organic device in electronic packaging.

Abstract: This paper seeks to use numerical simulation to study the effect of indium tin oxide-based emitters on the optical response and performance of nanogap thermophotovoltaic systems using a one-dimensional multi-layered model that incorporates fluctuational electrodynamics to solve the heat transfer problem. It is proposed that ITO be used as a selective emitter whose surface plasmon-polariton-enhanced heat flux spectrum is tuned by changing its processing method. In order to study the optical response of this system, an ITO layer is paired with three types of substrate materials to form three different two-layered emitters at 1000 K. It is discovered that an Ag/ITO emitter produces relatively high heat flux within a narrow spectrum as compared to the other two. It is shown that a substrate material possessing a dielectric function with low ε’ and ε” values (low absorption) contributes the least amount of heat flux and maximizes the contribution of the ITO layer at the resonant frequency producing a narrower spectral heat flux profile. Furthermore the substrate thickness has a significant effect on the heat flux spectrum especially at lower thicknesses. Finally, it is shown that by tuning ITO properties to better match the TPV cell’s band gap, higher power output and conversion efficiencies can be obtained.

Abstract: In this paper, a method for determining the doping efficiency of dispersed semiconductor metal oxide materials is proposed proposing to use the dependences of the free charge carrier concentration, normalized to the concentration of the doping impurity (N_{e spec.}), on the content of this impurity. The possibilities of this method are demonstrated by the example of studying the effect of technological factors on the efficiency of doping of indium oxide with tin and doping of tin oxide with antimony. It is shown that it is impossible to achieve the concentration of free charge carriers in the ITO material, higher than that in ATO materials, due to the lower solubility of tin in the In₂O₃ lattice, as compared with the solubility of antimony in the SnO₂ lattice.

Abstract: A simple method to indium tin alloy and oxide nanowires were achieved by using the extrusion molding process in the air. Eutectic indium tin bulk were firstly injected into AAO templates. After dissolving AAO, the indium tin nanowires were collected in ethanol. Furthermore, in order to have oxide nanowires, alloy nanowires were directly oxidized by heat treatment in the air below its melting point for 24 hours. Finally, crystalline indium-tin oxide and indium oxide nanowires with diameters 90-110 nm and lengths 2-20 μm were obtained.

Abstract: Indium tin oxide (ITO) films were deposited on glass substrates by magnetron sputtering. Properties of ITO films showed a dependence on substrate temperature. With an increasing in substrate temperature, the intensity of XRD peak increased and the grain size showed an evident increasing. The results show that increasing substrate temperature remarkably improves the characteristics of the films. The sheet resistance of 10 Ω/sq and the maximum optical transmittance of 90% in the visible range with optimized conditions can be achicved. The results of experiment demonstrate that high-quality films have been achieved by this technique.