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Articles by keyword: «Infrared Absorption»

• 1207cm^-1 Infrared Absorption Band in Carbon-Rich Silicon Crystal
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIV (p172)
• A Model for Anharmonic Vibrational Excitation of <111>-Bond-Interstitial Impurities in Si and Ge Crystals
  Published in: Defects in Semiconductors 17 (p1391)
• Ab Initio Cluster Theory of Substitutional Oxygen in Silicon
  Published in: Defects in Semiconductors 17 (p1299)
• An Infrared Absorption Gas Detection System Applying Plane Blazed Grating
  Published in: Fundamental of Chemical Engineering (p2665)
• Annealing Behaviour of New Nitrogen Infrared Absorption Peaks in CZ Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p609)
• Calibration Factor for Determination of Interstitial Oxygen Concentration in Germanium by Infrared Absorption
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p735)
• Carbon-Oxygen Complexes and Oxygen Precipitation in Silicon Crystals Observed by Low-Temperature Infrared Absorption
  Published in: Shallow Impurities in Semiconductors V (p201)
• Diffusion of Deuterons and Protons in α-Al₂O₃ Crystals Enhanced by an Electric Field
  Published in: Defects in Insulating Materials (p395)
• Electric Field Broadening of Gallium Acceptor States in Compensated Ge: Ga, As
  Published in: Defects in Semiconductors 18 (p127)
• Electronic Properties and Structure of a Complex Incorporating a Self-Interstitial and two Oxygen Atoms in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p273)
• Electron-Irradiaton Induced Defects in Fe-Doped Semi-Insulating InP
  Published in: Defects in Semiconductors 18 (p1443)
• EPR and Optical Studies on as Grown Polycrystalline Diamond and Diamond Films Annealed between 1100 and 1900K
  Published in: Defects in Insulating Materials (p111)
• FTIR Study of Precipitation of Implanted Nitrogen in CZ-Si Annealed under High Hydrostatic Pressure
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p157)
• Hydrogen-Saturated SiC-Surfaces: Model Systems for Studies of Passivation, Reconstruction and Interface Formation
  Published in: Silicon Carbide and Related Materials 2004 (p535)
• Infra Red Absorption by Hydrogen-Passivated Cracks in Silicon
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p155)