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Articles by keyword: «Interface Layer»

• Analysis of a Crack in a Functionally Gradient Interface Layer under Static and Dynamic Loading
  Published in: Fracture and Strength of Solids IV (p331)
• Analysis of Reflectivity Measurements for GaN Films Grown on GaAs: Influence of Surface Roughness and Interface Layers
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1347)
• Diffusional Analysis in Al-Ni Cold Rolled Strip during Annealing Process
  Published in: Emerging Materials and Mechanics Applications (p710)
• Effect of Interfacial Hydrogen in CoSi₂/Si(100) Schottky-Barrier Contacts
  Published in: Defects in Semiconductors 17 (p1653)
• Evaluation of Carbonized Layers for 3C-SiC/Si Epitaxial Growth by Ellipsometry
  Published in: Silicon Carbide and Related Materials 2001 (p335)
• Fatigue Damage Behavior Depending on the Bonding Interface Layer in Copper Film Bonded to Base Metals
  Published in: Advances in Fracture and Damage Mechanics IX (p253)
• Free Exciton Recombination in Tensile Strained GaN Grown on GaAs
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1271)
• Gradient Interface Layers to Improve c-BN Thin Film Adhesion
  Published in: Trends and New Applications of Thin Films (p259)
• High-K: Latest Developments and Perspectives
  Published in: Rapid Thermal Processing and beyond: Applications in Semiconductor Processing (p165)
• Investigation of Subcontact Layers in SiC after Diffusion Welding
  Published in: Silicon Carbide and Related Materials 2007 (p647)
• Observation of SiC Oxidation in Ultra-Thin Oxide Regime by In Situ Spectroscopic Ellipsometry
  Published in: Silicon Carbide and Related Materials 2008 (p509)
• The Interface between Polysilicon and Monocrystalline Silicon: Interface Layer and Electrical Characteristic
  Published in: Reactive Phase Formation at Interfaces and Diffusion Processes (p493)
• The Investigation of 4H-SiC/SiO₂ Interfaces by Optical and Electrical Measurements
  Published in: Silicon Carbide and Related Materials 2001 (p1013)