Papers by Keyword: Interfacial Structure

Abstract: The free energy function of martensitic transformation is established using Landau polynomial. According to the free energy function, the interfacial structural modification of austenite-martensite with the chemical driving force of martensitic transformation and elastic constants of materials is discussed. Some characteristics of martensitic transformation, such as the difference between thermoelastic and nonthermoelastic martensitic transformation, martensitic growth, are explained.

Abstract: In this paper, pure aluminium and Al-Cu (1%, 3% and 5% in mass fraction) alloy matrix composites reinforced with 35vol% 3Al2O32SiO2 short fibers were fabricated by a squeeze-casting technique. Interfacial structure and distribution of element of the composites were investigated by means of SEM, EPMA and TEM. The experimental results indicated that when pure aluminium was used as matrix, the interface was slick and chemical reaction occurred at the interface between amorphous SiO2 and matrix Al. When Cu element was added into the Al matrix alloy, the amorphous SiO2 on the fiber surface remained. Further more, with the increase of Cu element, the amount of the retained amorphous SiO2 increased. The interfacial reaction was inhibited due to the Cu element diffusion and enrichment towards the short fiber surface. SEM observation showed that large amount of fiber was drawn out from the matrix and some of them have been ruptured. Tensile test showed that the tensile strength of the 35vol% 3Al2O32SiO2sf/Al-Cu composite increased with the increasing of Cu content as compared with the Al2O3f/pure Al composite, the increment of the fracture strength of 3Al2O32SiO2sf/Al-Cu composite were 102%, 146% and 171%, respectively.

Abstract: Wetting can be regarded as a kind of effective nanostructure-forming process. To control the structure, a study on the relationship between atomic interactions and the resultant wetting behaviors is required. To model the wetting system, two sets of interatomic potentials for Metal/MgO(100) systems are derived from first principles calculation results for the simple configurations. A molecular dynamics method is applied to simulate the system and shows that Al atoms wet better than Sn atoms on the MgO substrate. The tendency is consistent with the experimental contact angles. The interfacial structures are different between these two systems.

Abstract: Gallium nitride (GaN) and indium nitride (InN) films were grown on a zinc oxide (ZnO) single crystalline substrate with a (0001) orientation using molecular beam epitaxy. The interfacial structure and relaxation mechanism of the lattice mismatch at the nitride/oxide interface were investigated, particularly the effects of an (In,Ga)N alloy buffer layer on the interfacial structure of the GaN films. This layer significantly improved the crystallinity of the GaN films by gradually relaxing the lattice mismatch between the GaN and ZnO. In spite of the large lattice mismatch between InN and ZnO, InN films with high crystallinity were grown without an (In,Ga)N buffer layer. Structural analysis revealed that an InN layer with low crystallinity formed spontaneously during the initial growth stage, and this amorphous-like layer likely contributed to relaxation of the interfacial stress caused by the lattice mismatch.