| Paper Title | Page |
|---|---|
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Doping of Silicon Carbide by Ion Implantation Authors: Bengt G. Svensson, Anders Hallén, Margareta K. Linnarsson, Andrej Yu. Kuznetsov, Martin S. Janson, Boleslaw Formanek, John Österman, P.O.Å. Persson, L. Hultman, L. Storasta, F.H.C. Carlsson, Peder Bergman, C. Jagadish, Erwan Morvan |
549 |
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Authors: P.K. Giri |
1 |
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Positron Lifetime Calculation for Interstitial Clusters in Fe and Ni Authors: T. Onitsuka, M. Ohmura, M. Takenaka, Eiichi Kuramoto |
163 |