| Paper Title | Page |
|---|---|
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(Nitrogen-Vacancy)-Complex Formation in SiC: Experiment and Theory Authors: Gerhard Pensl, Frank Schmid, Sergey A. Reshanov, Heiko B. Weber, M. Bockstedte, Alexander Mattausch, Oleg Pankratov, Takeshi Ohshima, Hisayoshi Itoh |
307 |
|
35 Years of Defects in Semiconductors: What Next? Authors: G.D. Watkins |
9 |
|
Authors: Lars S. Løvlie, Lasse Vines, Bengt G. Svensson |
431 |
|
A New Model for the DI-Luminescence in 6H-SiC Authors: E. Rauls, Uwe Gerstmann, M.V.B. Pinheiro, Siegmund Greulich-Weber, Johann Martin Spaeth |
465 |
|
Annealing Behaviour of Vacancy-and Antisite-Related Defects in Electron-Irradiated 4H-SiC Authors: Z. Zolnai, Nguyen Tien Son, Björn Magnusson, Christer Hallin, Erik Janzén |
473 |
|
Authors: K. Krambrock, M.V.B. Pinheiro, S.M. Medeiros |
957 |
|
Authors: B. Aradi, Adam Gali, Peter Deák, E. Rauls, Thomas Frauenheim, Nguyen Tien Son |
455 |
|
Calculation of Local Vibrational Modes at Point Defects in Semiconductors Authors: Udo Scherz, Christoph Schrepel |
1583 |
|
Cathodoluminescence of SiO2/Si System Authors: M.V. Zamoryanskaya |
487 |
|
Deep Hole Traps in As-Grown 4H-SiC Epilayers Investigated by Deep Level Transient Spectroscopy Authors: Katsunori Danno, Tsunenobu Kimoto |
501 |