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Articles by keyword: «Intrinsic Defect»

• (Nitrogen-Vacancy)-Complex Formation in SiC: Experiment and Theory
  Published in: Silicon Carbide and Related Materials 2006 (p307)
• 35 Years of Defects in Semiconductors: What Next?
  Published in: Defects in Semiconductors 17 (p9)
• A Laterally Resolved DLTS Study of Intrinsic Defect Diffusion in 4H-SiC after Low Energy Focused Proton Beam Irradiation
  Published in: Silicon Carbide and Related Materials 2009 (p431)
• A New Model for the D_I-Luminescence in 6H-SiC
  Published in: Silicon Carbide and Related Materials 2004 (p465)
• Annealing Behaviour of Vacancy-and Antisite-Related Defects in Electron-Irradiated 4H-SiC
  Published in: Silicon Carbide and Related Materials 2003 (p473)
• As Antisite-Related Defects Detected by Spin-Dependent Recombination in Delta-Doped (Si) GaAs Grown by MBE at Low Temperature
  Published in: Defects in Semiconductors 19 (p957)
• Boron Centers in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p455)
• Calculation of Local Vibrational Modes at Point Defects in Semiconductors
  Published in: Defects in Semiconductors 18 (p1583)
• Cathodoluminescence of SiO₂/Si System
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p487)
• Deep Hole Traps in As-Grown 4H-SiC Epilayers Investigated by Deep Level Transient Spectroscopy
  Published in: Silicon Carbide and Related Materials 2005 (p501)
• Deep Level Defects Related to Carbon Displacements in n- and p-Type 4H-SiC
  Published in: Silicon Carbide and Related Materials 2005 (p489)
• Deep Level near E_C – 0.55 eV in Undoped 4H-SiC Substrates
  Published in: Silicon Carbide and Related Materials 2005 (p505)
• Deep Levels in Electron-Irradiated n- and p-type 4H-SiC Investigated by Deep Level Transient Spectroscopy
  Published in: Silicon Carbide and Related Materials 2006 (p331)
• Deep Levels Responsible for Semi-Insulating Behavior in Vanadium-Doped 4H-SiC Substrates
  Published in: Silicon Carbide and Related Materials 2007 (p401)
• Defects in 4H-SiC Layers Grown by Chloride-Based Epitaxy
  Published in: Silicon Carbide and Related Materials 2008 (p373)