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Articles by keyword: «Intrinsic Point Defects (IPD)»

• Atomic Environment of Positrons Annihilating in Different Parts of Cz-Si Single Crystal
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p507)
• Atomic Environment of Positrons Annihilating in HT Cz-Si Crystal
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p615)
• Diffusion and Electrical Properties of Nickel in Silicon
  Published in: Defects and Diffusion in Semiconductors (p171)
• Diffusion and Interdiffusion Semiconductors, Studied at the Atomic Level
  Published in: Diffusion in Materials - DIMAT 1992 (p917)
• Integrated Approach for Modeling of Heat Transfer and Microdefect Formation during CZ Silicon Single Crystal Growth
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p283)
• Intrinsic Point Defect Engineering in Silicon High-Voltage Power Device Technology
  Published in: Defects in Semiconductors 19 (p1801)
• Mechanism of Formation and Physical Classification of the Grown-In Microdefects in Semiconductor Silicon
  Published in: Defects and Diffusion in Semiconductors - An Annual Retrospective VII (p177)
• Non-Equilibrium Point Defects and Diffusion in GaAs and Related Compounds
  Published in: Shallow Impurities in Semiconductors V (p53)
• On the Role of Bulk Recombination of Intrinsic Point Defects in Si and their Interaction with the Surface in the Course of {113} Defect Growth: a Kinetic Study by in situ HVEM Irradiation
  Published in: Defects and Diffusion in Semiconductors (p21)
• Optical and Electrical Properties of Si:Er Light-Emitting Structures
  Published in: Defects in Semiconductors 18 (p597)
• Predicting Material Parameters for Intrinsic Point Defect Diffusion in Silicon Crystal Growth
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p35)
• Rapid Thermal Processing and the Control of Oxygen Precipitation Behaviour in Silicon Wafers
  Published in: Rapid Thermal Processing and beyond: Applications in Semiconductor Processing (p45)
• Relation between Dislocation Motion and Formation of Intrinsic Point Defects
  Published in: Defects in Semiconductors 17 (p1589)
• Which is Larger, a Self-Interstitial or a Vacancy Activation Energy of Diffusion in Silicon?
  Published in: Diffusion in Materials - DIMAT2004 (p181)