HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by keyword: «KOH»

• Comparison Study of the Electrochemical Behavior of Vanadate in NaOH and KOH Solutions
  Published in: Advances in Metallurgical and Mining Engineering (p66)
• Dislocation Revelation in Highly Doped N-Type 4H-SiC by Molten KOH Etching with Na₂O₂ Additive
  Published in: Silicon Carbide and Related Materials 2010 (p290)
• Dislocations and Triangular Defect in Low-Temperature Halo-Carbon Epitaxial Growth and Selective Epitaxial Growth
  Published in: Silicon Carbide and Related Materials 2008 (p121)
• Effects of Dislocations on Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer
  Published in: Silicon Carbide and Related Materials 2004 (p661)
• Influence of Threading Dislocations on Lifetime of Gate Thermal Oxide
  Published in: Silicon Carbide and Related Materials 2011 (p477)
• Inverted Pyramid Defects in 4H-SiC Epilayers
  Published in: Silicon Carbide and Related Materials 2008 (p125)
• Investigation of Pits Formed at Oxidation on 4H-SiC
  Published in: Silicon Carbide and Related Materials 2007 (p377)
• Preparation of Activated Carbon from Medical Waste
  Published in: New Materials, Applications and Processes (p2091)
• Preparation of Modified Expanded Graphite by KOH
  Published in: Renewable and Sustainable Energy (p800)
• Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and Cantilevers
  Published in: Silicon Carbide and Related Materials 2003 (p169)
• Surface Morphology Improvement and Repeatable Doping Characterization of 4H-SiC Epitaxy Grown on 4° Off-Axis 4H-SiC Wafers
  Published in: Silicon Carbide and Related Materials 2008 (p423)
• Surface-Texturing of Single-Crystalline Silicon Wafers
  Published in: Engineering Materials V (p124)
• Variation of Etch Pit Size by Screw Dislocation Tilt in 4H-SiC Wafer
  Published in: Silicon Carbide and Related Materials 2011 (p367)