HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by keyword: «KOH Etching»

• 4H- and 6H-SiC MOSFETs Fabricated on Sloped Sidewalls Formed by Molten KOH Etching
  Published in: Silicon Carbide and Related Materials 2001 (p1215)
• A New Method of Mapping and Counting Micropipes in SiC Wafers
  Published in: Silicon Carbide and Related Materials 2005 (p447)
• A Simple Mapping Method for Elementary Screw Dislocations in Homoepitaxial SiC Layers
  Published in: Silicon Carbide and Related Materials 2001 (p443)
• A Study of 6H-Seeded 4H-SiC Bulk Growth by PVT
  Published in: Silicon Carbide and Related Materials 2004 (p21)
• Characterization of Dislocations and Micropipes in 4H n⁺ SiC Substrates
  Published in: Silicon Carbide and Related Materials 2007 (p333)
• CVD Growth and Characterization of 4H-SiC Epitaxial Film on (11-20) As-Cut Substrates
  Published in: Silicon Carbide and Related Materials 2004 (p113)
• Dislocation Analysis in Highly Doped n-Type 4H-SiC by Using Electron Beam Induced Current and KOH+Na₂O₂ Etching
  Published in: Silicon Carbide and Related Materials 2010 (p294)
• Epitaxial Growth of (11-20) 4H-SiC Using Substrate Grown in the [11-20] Direction
  Published in: Silicon Carbide and Related Materials 2001 (p195)
• Experimental Observations of Extended Growth of 4H-SiC Webbed Cantilevers
  Published in: Silicon Carbide and Related Materials 2005 (p247)
• Gate Oxide Defect Analysis Using Scanning Electron Microscopy (SEM)/Metal Oxide Semiconductor (MOS)/Electron Beam Induced Current (EBIC) with Sub-Nano Ampere Current Breakdown
  Published in: Beam Injection Assessment of Defects in Semiconductors (p395)
• Improved Mesa Designs for the Growth of Thin 4H-SiC Homoepitaxial Cantilevers
  Published in: Silicon Carbide and Related Materials 2006 (p117)
• Investigation of Triangular Defects in 4H-SiC 4° Off Cut (0001) Si Face Epilayers Grown by CVD
  Published in: Silicon Carbide and Related Materials 2007 (p139)
• New Separation Method of Threading Dislocations in 4H-SiC Epitaxial Layer by Molten KOH Etching
  Published in: Silicon Carbide and Related Materials 2010 (p298)
• Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT
  Published in: Silicon Carbide and Related Materials 2008 (p45)
• Nondestructive Analysis of Stacking Faults in 4H-SiC Bulk Wafers by Room-Temperature Photoluminescence Mapping under Deep UV Excitation
  Published in: Silicon Carbide and Related Materials 2006 (p275)