Papers by Keyword: LB Technique

Abstract: By the Langmuir-Blodgett(LB) technique, the zinc ion containing multilayer was prepared by transferring the zinc acetate, spread on the surface of subphase of ultrapure water and stearic acid-chloroform mixtures, onto a hydrophilic silicon wafer or glass plate. Then the multilayer was converted into ZnO ultrathin films after pre-heating and annealing. The optimized parameters for monolayer formation, such as concentration of subphase, barrier speed and spreading volume, were determined by the measurement of the surface pressure-surface area (Π-A) isotherms. The expended areas after deposition with zinc ions inferred the interaction of stearic acid with zinc ion during the formation of monolayer at air-water interface. The optimized parameters for multilayer deposition, such as surface pressure and lifting speed were determined by the measurement of the transfer coefficient. The X-ray diffraction(XRD) was used to investigate the crystal structures of ZnO nanoparticles and ultrathin film. The surface morphologies of the LB multilayer and ultrathin film were observed by the atomic force microscopy (AFM). A uniform and flat surface of ZnO ultrathin film within nanometer ranges(<35nm) were obtained.

Abstract: The oriented La modified PZT thin films were prepared on Pt/Ti/SiO2/Si substrate by the LB technique. The pre-sintering temperatures and the annealing temperatures for La modified PZT were determined by TG-DTA curves and XRD detect results. XRD detection of PZT and PZT with different La amount illustrated the crystal constructions and the effects by modification. The AFM observation of PLZT thin films with organic acid indicated that the LB technique could obtain smooth and flat film with the deposition of PLZT particles within nanometers on substrate. The detection results of the electrical properties indicated that the modification of La had great influence on the electric properties of LB thin film. PLZT thin film by annealing at 650°C had better dielectric constant of 569.2 and dielectric loss of 0.4915 at 5 kHz. And the amount of La of 2% in mass gave the piezoelectric constant of 14pC/N.