Papers by Keyword: Large Signal

Abstract: Hetero-structure of Al_xGa_1-xN/GaN exhibits important applications in high frequency and large power devices. In this paper, AlN/GaN is adopted to optimal design the large power impact avalanche transit time (IMPATT) and mixed tunneling avalanche transit time (MITATT) diodes operating at the atmospheric low loss window frequency of 0.85 THz. The static state and large signal characteristics of the devices are numerically simulated. The values of peak electric field strength, break-down voltage, avalanche voltage, the maximum generation rates of avalanche and tunneling, admittance-frequency relation, output power, conversion efficiency, quality factor of the proposed hetero-structural IMPATT and MITATT diodes are calculated, respectively. Via comparing the obtained results of (n)AlN/(p)GaN and (n)GaN/(p)AlN IMPATT diodes to those of the MITATT counterparts, there exists little performance difference between IMPATT and MITATT devices while implies significant difference between the (n)AlN/(p)GaN and (n)GaN/(p)AlN diodes.

Abstract: Successes of GaN and SiC electronics in high frequency, large power realm indicate that, the GaN/SiC hetero-structures can be used to design the impact avalanche transit time (IMPATT) diodes operating at Terahertz range, of which holds advantages over homo-structural counterparts in lower noise and reduced tunnel current. Here, the (n)GaN/(p)SiC and (p)GaN/(n)SiC double drift region (DDR) IMPATT diodes operating at 0.85 THz are proposed based on the quantum corrected drift-diffusion (QCDD) model, the performance parameters of static state, large signal and noise properties of the studied devices such as peak electric field intensity, breakdown voltage, optimal negative conductance, output power, conversion efficiency, admittance-frequency relation, quality factor, noise electric field, mean-square noise voltage per band-width and noise measure were numerically calculated and analyzed, which can guide to optimize the GaN/SiC IMPATT diodes.

Abstract: Si/SiC heterostructural impact avalanche transit time (IMPATT) diode indicates of important applications in Terahertz (THz) power source, integrated circuit etc. In this paper, the (n)Si/(p)4H-SiC, (n)Si/(p)6H-SiC, (n)Si/(p)3C-SiC heterostructural double drift region IMPATT diodes operating at the atmospheric window frequency of 0.85 THz are designed by the drift-diffusion model while their static state, large signal and noise properties are numerically simulated. The performance parameters of the studied devices such as breakdown voltage, peak electric field strength, optimal negative conductance, output power, power conversion efficiency, admittance-frequency relation, quality factor, noise electric field, mean-square noise voltage per band-width and noise measure were calculated and compared. This method can guide for optimizing the Si/SiC heterostructural IMPATT device in the future.