Papers by Keyword: Laser Annealing

Abstract: Laser annealing is considered an enabling process for a new generation of SiC power devices, since it allows the formation of ohmic contacts on very thin wafers, significantly reducing their total ON resistance. Ni silicide and Ti silicide ohmic contacts have been widely investigated and reported in literature, exploring in detail the role of laser features, metal thickness and thinning process. Nevertheless, adding a small amount of Si to the contact layer could represent an opportunity to increase process options. In this work, a NiSi alloy has been used as a contact metal to study the role of the addition of Si to Ni in the reaction process under UV laser irradiation. Morphological and structural properties of the reacted layers have been investigated by means of Transmission Electron Microscopy (TEM) and X-Ray Diffraction (XRD) analyses. The electrical characterization of reacted contacts has been performed by measuring their Sheet Resistance (R_s) by Four Point Probe (FPP) method and, at device level, by measuring the forward voltage drop (V_f) of Schottky Barrier Diodes (SBDs) fabricated on 150 mm-diameter 4H-SiC wafers. Furthermore, a comparison has been made between Ni and NiSi alloy under the same irradiation conditions. It has been found that adding Si to Ni in the contact metal layer moves the silicide reaction forward, driving the strong relationship observed between structural, morphological and electrical properties of the reacted contacts.

Abstract: Laser Thermal Annealing (LTA) is a necessary fabrication step to improve the 4H-SiC devices by reducing their ON-state resistance. Because the LTA annealing is achieved at the end of the front-end fabrication, the classical Radio Corporation of America cleaning (RCA) cannot be used without affecting the material deposited on the frontside. Therefore, in this study, we investigate the argon (Ar) plasma surface treatment, achieved in our sputtering tool, before the ohmic contact fabrication, as an alternative surface preparation to the RCA sequence. As the Ar plasma modifies the SiC surface morphology, it affects its wetting properties. That can play a key role in the ohmic contact formation by LTA since the nickel turns into liquid phase during the laser irradiation. For an Ar plasma treatment of 30 min, a specific contact resistance of 5.0×10^-5 Ω.cm² has been obtained for an annealing at 5.0 J.cm², which is in the same range than the contact fabricated by LTA involving a classical RCA cleaning.

Abstract: In this work, a method is presented to form structured low-ohmic p-type contacts on Al-implanted 4H-SiC by laser annealing. A metal layer sequence for p-type contacts suitable for UV laser treatment was developed. Furthermore, a method to protect thermosensitive layers from damages by laser treatment is presented. By structuring the top metallization layer, it is possible to use the metal stack as a self-aligned mask. That makes it possible to laser the entire surface of the wafer, whereby thermosensitive layers are protected from damages by laser annealing by utilizing the optical properties of the individual metal layers. To evaluate the method, TLM structures were electrically characterized. TLM structures were electrically characterized successfully demonstrating the feasibility of the presented approach.

Abstract: This paper demonstrates for the first time a new annealing scheme to form p-type junctions in SiC by high temperature ion implantation followed by laser annealing without the use of a protective carbon capping layer. This novel approach leverages higher substrate temperatures during implant to minimize implant-induced defects during ion implantation, which enables the use of reduced thermal budget laser annealing for dopant activation. Laser annealing enables higher surface temperatures in the implanted layer than conventional annealing using a high temperature furnace. The shorter thermal budget results in higher dopant activation while minimizing, the formation of extended defects observed during high thermal budget furnace annealing, which can lead to undesirable degradation in device performance. By using laser annealing with no carbon capping layer, the sheet resistance of the implanted layers is reduced up to 6 times with respect to the conventional process (using a furnace anneal and carbon capping layers).

Abstract: New generations of SiC power devices require to be fabricated on very thin substrates, in order to significantly reduce the series resistance of the device. The role of thinning process on the formation of backside ohmic contact has been investigated in this work. Three different mechanical grinding processes have been adopted, resulting in different amounts of defectivity and surface roughness values. An excimer UV laser has been used to form a Ni-silicide based ohmic contact on the backside of the wafers. The reacted layer has been studied by means of Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM) and X-Ray Diffraction (XRD) analyses, as a function of grinding process parameters and laser annealing conditions. The ohmic contact has been evaluated by measuring the Sheet Resistance (R_s) of silicided layers and the V_f at nominal current of Schottky Barrier Diode (SBD) devices, fabricated on 150 mm-diameter 4H-SiC wafers. A strong relationship has been found between the crystal damage, induced by thinning process, and the structural, morphological and electrical properties of silicided ohmic contact, formed by UV laser annealing, revealing that the silicide reaction is moved forward, at fixed annealing conditions, by the increasing of crystal defectivity and surface roughness of SiC.

Abstract: The need of removing the mechanical damage and the stress introduced during the thinning step of device process flow is challenging for manufacturing of high quality SiC-based devices. In this respect we have identified two different back finishing approaches, based on material removal and material rearrangement. The first one includes dry polishing (DP) and chemical mechanical polishing (CMP); the second one includes bulk and laser annealing. Systematical investigation on wafer warpage, sample morphology and die mechanical reliability have been conducted and comparison between the two approaches has been done. The CMP and DP processes can remove the damage produced by back grinding, recovering wafer warpage and resulting in a smoother surface. Bulk thermal annealing has provided better roughness levels and has been successful in stress relief, although the wafer permanence at high temperature is not compliant with the device process flow. Under laser annealing process, the surface features keep almost unchanged as well as warpage level. Despite being not effective in stress relief, from a mechanical point of view, the laser annealing process, does not impact die reliability, representing a suitable back finishing process especially in the optic of its use in backside ohmic contact formation.

Abstract: Laser Thermal Annealing (LTA) is a key process step to improve the 4H-SiC devices by reducing their on-state resistance. In this study, we investigate the electrical, structural and morphological properties of nickel contact fabricated by LTA. A contact formed by a classical Rapid Thermal Annealing (RTA) was also fabricated as reference. Based on structural analysis, the phases formed by LTA do not match with RTA sample ones that has better ohmic properties. Nevertheless, the LTA contacts reach a specific contact resistance of 2.4×10^-5 Ω.cm² for an annealing at 4.75 J.cm^‑2, which represents a significant improvement in comparison with our previous contacts fabricated with the same experimental protocol using titanium.

Abstract: In this work, an empirical model of structural and material composition of low-ohmic nickel silicide contact formation on n-type 4H-SiC by laser annealing as well as by RTA is presented. For this purpose, systematic studies with different annealing parameters were performed. The development of the empirical model is based on results from characterization of the nickel silicide by FIB-SEM, TEM, XRD analysis as well as electrical characteristics received from 4-point-measurements.

Abstract: In this work, the influence of different surface roughness and surface treatments on the minimum energy density required to form low-ohmic nickel contacts on n-type 4H-SiC by laser annealing was investigated. The annealing was performed by a frequency-tripled Nd:YVO₄ laser with a pulse duration of 50 ns. To evaluate the effects, the grinded or polished C-side of 4H-SiC wafers with surface roughness between 0.3 and 70 nm was sputter-deposited with nickel and subsequent laser annealed. Sheet resistance measurements showed that the minimum energy density required to achieve a low-resistance contact depends significantly on the surface roughness. The rougher the surface, the lower the minimum energy density to form a low-ohmic contact.

Abstract: To achieve low on-resistance in any vertical 4H-SiC semiconductor power device, it is essential to create a suitable ohmic contact on the corresponding n-doped SiC substrate. In particular after wafer thinning, a common technology to reduce substrate resistivity, laser annealing for ohmic contact formation on the wafer backside is the only option due to temperature sensitive materials (such as Titanium or Aluminum) on the partially or fully processed wafer frontside. In this work, to solve adhesion issues of the backside metallization, plasma treatments, as easy to integrate process steps, were examined. By stripping obstructive carbon layers, formed after ohmic contact laser annealing, and without damaging the wafer frontside, an enhanced adhesion of following metallization layers was achieved. Both O₂- and H₂-plasma processes were investigated and demonstrated significant improvements to the adhesion of metallization stacks on the wafer backside compared to untreated surfaces and without drawbacks in the ohmic contact quality.