Papers by Keyword: Leakage Current

Abstract: Silicon carbide (SiC) radiation detectors were realized by ¹⁰B implantation into the metal contact in order to avoid implantation-related defects within the sensitive area of the 4H-SiC pn junction. No post implantation annealing was performed. Such detectors respond to thermal neutrons showing consistent counting rates as function of external reverse bias voltages and radiation intensity.

Abstract: Insulator fault may lead to the accident of power network,thus the on-line monitoring of insulator is very significant. Low rates wireless network is used for data transmission of leakage current. Making data compression and reconstruction of leakage current with the compressed sensing theory can achieve pretty good results. Determination of measurement matrix is the significant step for realizing the compressed sensing theory. This paper compares multiple measurement matrix of their effect via experiments, putting forward to make data compression and reconstruction of leakage current using Toeplitz matrix, circulant matrix and sparse matrix as measurement matrix, of which the reconstitution effect is almost the same as classical measurement matrix and depletes computational complexity and workload.

Abstract: Natural Aloe vera paste has been reported as an alternative organic dielectric material. In this study, natural Aloe vera paste incorporated with silicon dioxide (SiO₂) nanoparticles (NPs) has been investigated. The natural Aloe vera paste with different weight loading (0.5 to 3.8 wt%) of SiO₂ NPs was screen printed on aluminum (Al) layer supported by a soda lime glass substrate and dried at room temperature. The solidified sample with 1.5 wt% of SiO₂ NPs showed the lowest leakage current density. Next, the solidified samples were additional dried in an oven at 40°C for 30 minutes to study its effect against room temperature. The additional drying process facilitated cross-linking on natural Aloe vera layer and consequently enhanced the dielectric properties of the natural Aloe vera with 1.5 wt% of SiO₂ NPs, whereby leakage current and dielectric constant were decreased and increased, respectively.

Abstract: Previous studies have shown that lead titanate (PbTiO₃) with its full potential brings out the ferroelectric property provided by its perovskite structure. It was predicted that from origination to become a modified lead titanate is most preferable, i.e. lead zirconium titanate (PZT). In the present study, PbTiO₃ thin films were made through a simple sol-gel method by using spin coating technique. The deposition of thin films was at constant rate, 100rpm/s and took about 25s to complete. The fabricated thin films were then annealed at different temperature. After that, the films thickness measurement was taken by surface profiler (KLA Tencor) and characterization on dielectric property comprised at different anneal temperature. This feature indicates the power loss that will be taken into account under ac condition. The measurement of thin films was executed at 1Hz to 1MHz by using impedance spectroscopy analyzer (Solartron S1 1260A-1296) and electrical part was measured by solar simulator (BUKOH KEIKI EP-2000).

Abstract: To improve voltage-gradient and to reduce the sintering temperature of ZnO varistors, high voltage-gradient ZnO varistors were synthesized with a conventional solid state reaction route. By means of SEM and DC parameter instrument for varistor, the influence of different technological parameters on microstructure, voltage-gradient and leakage current of ZnO varistors was investigated. The experimental results show that by using the process that presintering the additives at 850°C, the density is improved, the voltage-gradient is increased, and the leakage current is decreased. The optimum voltage-gradient and leakage current are 371V/mm and 3μA, respectively.

Abstract: This paper does aging test about zinc oxide varistor and collects the waveform data from the arrester before and after aging, then uses numerical calculation and FFT to analyze the waveform data. Through comparing the changes of characteristic parameters before and after aging such as power loss of varistor, leakage current and every harmonic current, this paper can get the relationship between varistor aging and leakage current, especially the changes of resistive fundamental and harmonic current after aging. Based on analysis and study of aging characteristic parameters of the arresters, it can provide the basis of the judgment for putting forward a new online monitoring method and contributes to the application and development of MOA monitoring technology.

Abstract: The effects of the addition of tin oxide (SnO₂) and yttrium oxide (Y₂O₃) to bismuth (Bi)-manganese (Mn)-cobalt (Co)-silicon (Si)-chromium (Cr)-nickel (Ni)-added zinc oxide (ZnO) varistors (a basic varistor) on the varistor voltage, resistance to electrical degradation, and leakage current were investigated. The addition of SnO₂ increased both the varistor voltage and the resistance to electrical degradation. However, simultaneous addition of both SnO₂ and Y₂O₃ increased the varistor voltage but the resistance to electrical degradation deteriorated. ZnO varistors with varistor voltage over approximately 520 V/mm, excellent resistance to electrical degradation, and low leakage current could be obtained by adding SnO₂ with SnO₂-to-ZnO molar ratio of approximately 1:10 to the basic varistor.

Abstract: Bi_3.25Eu_0.75Ti₃O₁₂ (BET) thin films with various excess bismuth (Bi) contents (5, 10, 15, 20-mol%) were grown by a metal-organic decomposition method at 700 °C. Effects of excess Bi content on microstructure and electric properties of BET thin films were investigated. BET thin film with 10-mol% excess Bi content shows larger remnant polarization (66.3 C/cm²), better fatigue endurance (3% loss of 2P_r after 1.8×10¹⁰ switching cycles), and lower leakage current density (1×10^-7 A/cm²) than those of other prepared BET thin films. Additionally, the mechanisms concerning the dependence of the properties on excess Bi content of BET thin films were discussed.

Abstract: This paper is proposed to analyze the power loss from leakage current in p-n junctions in case of non-uniform defects. The different geometry p-n junctions have been fabricated by a standard 0.8 micron CMOS technology. The diode fabricated by the ion implantation process with two different condition. The reverse current and voltage (I-V)characteristics at varied temperature of p-n junctions have been measured. The power loss coefficient can be extracted from the leakage current versus temperature. Form the derivative of leakage current with temperature, the power loss with prediction trend curve can be obtained.

Abstract: The effects of adding Sb to a BiMnCoSiCrNiYZr-added ZnO varistor (with the same composition as a commercial varistor) on the varistor voltage, leakage current, and resistance to electrical degradation were investigated. Bi is incorporated in spinel particles, and δ-Bi₂O₃ eventually disappears with the addition of small amounts of Bi, especially as the amount of Sb₂O₃ added increased. Reduction in both the nonlinearity index and the amount of δ-Bi₂O₃ for small amounts of added Bi with the addition of more than approximately 1.25 mol% Sb₂O₃ demonstrates that Sb inhibits Bi₂O₃ from forming deep interfacial impurity levels at the grain boundaries. The sample containing 1.2 mol% Bi₂O₃, 1.0 mol% ZrO₂, 1.0 mol% Y₂O₃, and 1.5 mol% Sb₂O₃ added exhibits a high varistor voltage (approximately 630 V/mm), high resistance to electrical degradation and low leakage current.