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Articles by keyword: «Light-Emitting Diode (LED)»

• A Novel Silicon-Based Packaging Platform for High-Efficiency LED Modules
  Published in: Advanced Manufacturing Technology (p359)
• A Simple Reliable Method of Selecting Epoxy Molding Compounds for High Power Short Wavelength Light Emitting Diode Packages
  Published in: Eco-Materials Processing & Design VII (p154)
• A Study of LED C-Like Linear Tube by Micromachining Technique for LCD Backlight Applications
  Published in: Advanced Design and Manufacture II (p189)
• Blue-U.V. Homojunction GaN LEDs Fabricated by MOVPE
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1425)
• Characteristics of TAG:Ce Phosphor Particles Prepared by Ultrasonic Spray Pyrolysis
  Published in: Advances in Nanomaterials and Processing (p419)
• Defect Characterization Using Random Telegraph Noise in GaN-Based Light-Emitting Diodes
  Published in: Applied Materials and Electronics Engineering (p763)
• Dependence of DAP Emission Properties on Impurity Concentrations in N-/B-co-doped 6H-SiC
  Published in: Silicon Carbide and Related Materials 2006 (p335)
• Detection of Grinding Surface’s Quality Based on Image Technique
  Published in: Advances in Grinding and Abrasive Technology XIV (p499)
• Dislocations in Silicon and D-Band Luminescence for Infrared Light Emitters
  Published in: Advances in Light Emitting Materials (p29)
• Effect of Packaging Materials and Process on the White LED Fabricated with Quantum Dots
  Published in: Advanced Materials (p2066)
• Effect of Temperature and Current on Luminous Efficiency of High Power LED
  Published in: Renewable and Sustainable Energy (p310)
• Electrical Behaviors of LEDs Prepared by Wide-Band GaN Material
  Published in: Materials and Design (p2202)
• Electrically and Optically Detected Magnetic Resonance in GaN-Based LEDs
  Published in: Defects in Semiconductors 19 (p1105)
• Electroluminescence of III-Nitride Double Heterostructure Light Emitting Diodes with Silicon and Magnesium Doped InGaN
  Published in: Defects in Semiconductors 19 (p1229)
• Embodiment and Luminescence Properties of Sr₃SiO₅:Eu(Yellow-Orange Phosphor) by Co-Doping Lanthanide
  Published in: Advances in Nanomaterials and Processing (p511)