Papers by Keyword: Low Temperature Process

Abstract: BaTiO₃ films were fabricated on Si substrate using inkjet printing technique. To achieve low-temperature fabrication of BaTiO₃ films, Ba-Ti-alkoxide ink was prepared. The mixing ratio and sequence of raw materials were optimized for controlling the chemical stability and viscosity of alkoxide ink. The inkjet printing films on Si substrate were annealed at 700 °C, and it resulted in the formation of BaTiO₃. It was found that the film quality was improved by adding BaTiO₃ nanoparticles into the Ba-Ti-alkoxide ink.

Abstract: An ultra-short pulse laser process is presented that is based on a photon-induced phonon excitation process for low-temperature nano-surface modification of silicon. The present methodology is based on the concept that the energy required for re-crystallization and activation of the implanted dopants is supplied to the dopant layer via a nonequilibrium adiabatic process induced by ultra-short pulse laser irradiation at room temperature. An ultra-short pulse laser beam with a pulse duration of ~ 100 femtoseconds has been used in the present work for the investigation of surface excitation features via pump-probe reflectivity measurements and for demonstrations of room-temperature re-crystallization and activation of ion-implanted silicon substrates.