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Articles by keyword: «Luminescence»

• Combustion Synthesis and Luminescence Properties of NaY_1-XTb_X(WO₄)₂ Novel Green Phosphors
  Published in: Manufacturing Science and Technology (p861)
• Comments on the Effect of γ-Irradiation on Positronium Formation in Polymers at Low Temperatures
  Published in: Positron Annihilation - ICPA-12 (p352)
• Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions
  Published in: Silicon Carbide and Related Materials 2004 (p377)
• Confinement Effects on the Electronic Structure of Shallow Acceptors in GaAs/AlGaAs Quantum Wells
  Published in: Defects in Semiconductors 17 (p657)
• Contribution of Raman and Luminescence Spectroscopies to the Investigation of Phase Demixion in the System Bi_xLn_(1-x)VO₄
  Published in: Physical Chemistry of Solid State Materials (p433)
• Copper(I) Luminescence in Phosphate and Borate Glasses
  Published in: Defects in Insulating Materials (p283)
• Co-Precipitation Processing of Nanosized (Y,Gd)₂O₃: Eu Powder and Its Enhanced X-Ray Excited Luminescence
  Published in: Functionally Graded Materials VIII (p101)
• Core Level Spectroscopy of II-Mn-VI Compounds by Luminscence Excitation with Synchrotron Radiation
  Published in: II-VI Compounds and Semimagnetic Semiconductors (p691)
• Defect Engineering in Si: Ho Light-Emitting Structure Technology
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p371)
• Defect Engineering in the Technology of Light-Emitting Structures Based on Monocrystalline Si Implanted with Rare Earth Ions
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p645)
• Defect Evolution in Ion Irradiated 6H-SiC Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2004 (p485)
• Defects and Recombination in Disordered Silicon
  Published in: Defects in Semiconductors 17 (p1451)
• Defects in He⁺ Irradiated 6H-SiC Probed by DLTS and LTPL Measurements
  Published in: Silicon Carbide and Related Materials 2003 (p493)
• Defects in Thick Epitaxial GaAs Layers
  Published in: Defects in Semiconductors 19 (p997)
• Dependence of Luminescence Properties of Bonded Si Wafers on Surface Orientation and Twist Angle.
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p555)