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Articles by keyword: «MBE»

• 3C-SiC Growth on 6H-SiC (0001) Substrates
  Published in: Silicon Carbide and Related Materials 2001 (p315)
• A Variable-Energy Positron Beam for In-Line MBE Study
  Published in: Positron Annihilation - ICPA-10 (p165)
• Absorption as Optical Access to Accepptor Concentrations and Compensation Mechanism in ZnSe Epilayers
  Published in: II-VI Compounds and Semimagnetic Semiconductors (p259)
• Achievement of MBE-Grown GaN Heteroepitaxial Layer with (0001) Ga-Polarity and Improved Quality by In Exposure
  Published in: Silicon Carbide and Related Materials - 1999 (p1459)
• AlGaN / GaN HEMT Structures Grown on SiCOI Wafers Obtained by the Smart Cut^TM Technology
  Published in: Silicon Carbide and Related Materials 2003 (p1621)
• An Accurate Method to Determine the Growth Conditions during Molecular Beam Epitaxy of Cubic GaN
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1173)
• As Antisite-Related Defects Detected by Spin-Dependent Recombination in Delta-Doped (Si) GaAs Grown by MBE at Low Temperature
  Published in: Defects in Semiconductors 19 (p957)
• Characterization of AlGaN/GaN HEMT Devices Grown by MBE
  Published in: Silicon Carbide and Related Materials - 1999 (p1647)
• Characterization of Point Defects in Impurity-Doped GaAs by Slow Positrons
  Published in: Positron Annihilation - ICPA-9 (p1487)
• Characterization of the Relaxation by Misfit Dislocations Confined at the Interface of GaN/Al₂O₃(0001) Studied by TEM
  Published in: Defects in Semiconductors 19 (p1755)
• Cleaning of Silicon Surfaces for Nanotechnology
  Published in: Rapid Thermal Processing and beyond: Applications in Semiconductor Processing (p77)
• Comparative TEM Investigation of MBE and RTCVD Conversion of Si into SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p285)
• Comparison between Optical and Structural Properties of ZnSe/GaAs(001) Heterostructures Grown by MBE under Different Beam Pressure Ratios
  Published in: Advances in Crystal Growth (p243)
• Critical Thickness Determination of II-VI Semiconductors by Rheed and X-Ray Diffraction
  Published in: II-VI Compounds and Semimagnetic Semiconductors (p147)
• Depth Profiling of Defects in Low Temperature MBE-Grown Silicon
  Published in: Positron Annihilation - ICPA-9 (p301)