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Articles by keyword: «MESFETs»

• A Comparison between Physical Simulations and Experimental Results in 4H-SiC MESFETs with Non-Constant Doping in the Channel and Buffer Layers
  Published in: Silicon Carbide and Related Materials 2000 (p699)
• A New 4H-SiC MESFET Utilizing N^- Shielding and Field Plate Techniques Simultaneously
  Published in: Manufacturing Processes and Systems (p1182)
• Characteristics of MESFETs Made by Ion-Implantation in Bulk Semi-Insulating 4H-SiC
  Published in: Silicon Carbide and Related Materials 2001 (p1391)
• Characterization of Power MESFETs on 4h-SiC Conductive and Semi-Insulating Wafers
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p949)
• Characterization of SiC MESFETs on Conducting Substrates
  Published in: Silicon Carbide and Related Materials - 1999 (p1255)
• Characterization of SiC Passivation Using MOS Capacitor Ultraviolet-Induced Hysteresis
  Published in: Silicon Carbide and Related Materials 2004 (p589)
• Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET
  Published in: Silicon Carbide and Related Materials 2001 (p1403)
• DC and Large-Signal RF Performance of Recessed Gate GaN MESFETs Fabricated by the Photoelectrochemical Etching Process
  Published in: Silicon Carbide and Related Materials - 1999 (p1639)
• Deep Level Investigation by Current and Capacitance Transient Spectroscopy in 4H-SiC MESFETs on Semi-Insulating Substrates
  Published in: Silicon Carbide and Related Materials 2003 (p1185)
• Development and Demonstration of High-Power X-Band SiC MESFETs
  Published in: Silicon Carbide and Related Materials 2001 (p1367)
• Double Implanted Power MESFET Technology in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p707)
• Effect of Device Temperature on RF FET Power Density
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p969)
• Evaluating the Three Common SiC Polytypes for MESFET Applications
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p965)
• Evaluation of SiC MESFET Structures Using Large-Signal Time-Domain Simulations
  Published in: Silicon Carbide and Related Materials 2001 (p1395)
• Fabrication of 4H-SiC Planar MESFETs Having Low Contact Resistance
  Published in: Silicon Carbide and Related Materials 2001 (p1383)