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Articles by keyword: «MOS»

• 3C-SiC MOS Based Devices: From Material Growth to Device Characterization
  Published in: Silicon Carbide and Related Materials 2010 (p433)
• 4H-SiC MOSFETs on (03-38) Face
  Published in: Silicon Carbide and Related Materials 2001 (p1065)
• A Comparison between SiO₂/4H-SiC Interface Traps on (0001) and (11-20) Faces
  Published in: Silicon Carbide and Related Materials 2003 (p1305)
• A Novel Recurrent Generalized Congruence Neural Network Measure for Objective Speech Quality Evaluation
  Published in: Materials Science and Information Technology (p2282)
• A Study of Deep Energy-Level Traps at the 4H-SiC/SiO₂ Interface and Their Passivation by Hydrogen
  Published in: Silicon Carbide and Related Materials 2007 (p755)
• A Study of the Shallow Electron Traps at the 4H-SiC/SiO₂ Interface
  Published in: Silicon Carbide and Related Materials - 2002 (p547)
• AlON/SiO₂ Stacked Gate Dielectrics for 4H-SiC MIS Devices
  Published in: Silicon Carbide and Related Materials 2008 (p541)
• An In-Situ Post Growth Annealing Process for the Improvement of 4H-SiC/SiO₂ MOS Interface Prepared by CVD Using TEOS, and its Characteristic Study
  Published in: Silicon Carbide and Related Materials 2004 (p681)
• An Investigation of Material Limit Characteristics of SiC IGBTs
  Published in: Silicon Carbide and Related Materials 2011 (p1143)
• Asymmetric Interface Densities on n and p Type GaN MOS Capacitors
  Published in: Silicon Carbide and Related Materials 2005 (p1525)
• Boron and Phosphorus Implantation Induced Electrically Active Defects in p-Type Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p313)
• Characterization of 4H-SiC MOSFETs with NO-Annealed CVD Oxide
  Published in: Silicon Carbide and Related Materials 2005 (p971)
• Characterization of Large Area 4H-SiC and 6H-SiC Capacitive Devices at 600 °C
  Published in: Silicon Carbide and Related Materials 2011 (p1187)
• Characterizations of SiC/SiO₂ Interface Quality Toward High Power MOSFETs Realization
  Published in: Silicon Carbide and Related Materials 2003 (p1281)
• Critical Reliability Issues for SiC Power MOSFETs Operated at High Temperature
  Published in: Silicon Carbide and Related Materials 2006 (p779)