Keyword: "MOS"
Papers by keyword:
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Paper Title Page

Asymmetric Interface Densities on n and p Type GaN MOS Capacitors

Authors: W. Huang, T. Khan, T. Paul Chow

1525

Boron and Phosphorus Implantation Induced Electrically Active Defects in p-Type Silicon

Authors: Jayantha Senawiratne, Jeffery S. Cites, James G. Couillard, Johannes Moll, Carlo A. Kosik Williams, Patrick G. Whiting

313

Characterization of 4H-SiC MOSFETs with NO-Annealed CVD Oxide

Authors: Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki

971

Characterization of Diverse Gate Oxides on 4H-SiC 3D Trench-MOS Structures

Authors: Christian T. Banzhaf, Michael Grieb, Achim Trautmann, Anton J. Bauer, Lothar Frey

691

Characterization of Large Area 4H-SiC and 6H-SiC Capacitive Devices at 600 °C

Authors: Ruby N. Ghosh, Reza Loloee

1187

Characterization of POCl3-Annealed 4H-Sic Mosfets by Charge Pumping Technique

Authors: Ai Osawa, Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki

541

Characterizations of SiC/SiO2 Interface Quality Toward High Power MOSFETs Realization

Authors: D. Ziane, Jean Marie Bluet, Gérard Guillot, Phillippe Godignon, Josep Montserrat, R.R Ciechonski, Mikael Syväjärvi, Rositza Yakimova, L. Chen, Philip A. Mawby

1281

Critical Reliability Issues for SiC Power MOSFETs Operated at High Temperature

Authors: Satoshi Tanimoto, Tatsuhiro Suzuki, Akihiro Hanamura, Masakatsu Hoshi, Toshiro Shinohara, Kazuo Arai

779

Deep States in SiO2/p-Type 4H-SiC Interface

Authors: Hiroshi Yano, N. Inoue, Tsunenobu Kimoto, Hiroyuki Matsunami

841

Deep-Level-Transient Spectroscopy Characterization of Mobility-Limiting Traps in SiO2/SiC Interfaces on C-Face 4H-SiC

Authors: Tetsuo Hatakeyama, T. Shimizu, T. Suzuki, Y. Nakabayashi, Hajime Okumura, K. Kimoto

477

Showing 11 to 20 of 100 Papers
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