| Paper Title | Page |
|---|---|
|
1.4kV Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1) Authors: Hiroshi Kono, Takuma Suzuki, Kazuto Takao, Masaru Furukawa, Makoto Mizukami, Chiharu Ota, Shinsuke Harada, Junji Senzaki, Kenji Fukuda, Takashi Shinohe |
607 |
|
Authors: Mrinal K. Das, David Grider, Scott Leslie, Ravi Raju, Michael Schutten, Allen Hefner |
1225 |
|
1360 V, 5.0 mΩcm2 Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1) Authors: Hiroshi Kono, Takuma Suzuki, Makoto Mizukami, Chiharu Ota, Shinsuke Harada, Junji Senzaki, Kenji Fukuda, Takashi Shinohe |
987 |
|
2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility Authors: Amador Pérez-Tomás, Marcel Placidi, N. Baron, Sébastien Chenot, Yvon Cordier, J.C. Moreno, José Millán, Phillippe Godignon |
1207 |
|
300ºC Silicon Carbide Integrated Circuits Authors: Zachary Stum, Vinayak Tilak, Peter A. Losee, Emad A. Andarawis, Cheng Po Chen |
730 |
|
3C-SiC MOSFET with High Channel Mobility and CVD Gate Oxide Authors: Motoki Kobayashi, Hidetsugu Uchida, Akiyuki Minami, Toyokazu Sakata, Romain Esteve, Adolf Schöner |
645 |
|
4H-SiC MOSFETs with a Stable Protective Coating for Harsh Environment Applications Authors: Walter Daves, A. Krauss, V. Häublein, A.J. Bauer, L. Frey |
1089 |
|
Authors: Zachary Stum, A.V. Bolotnikov, Peter A. Losee, Kevin Matocha, Steve Arthur, Jeff Nasadoski, R. Ramakrishna Rao, O.S. Saadeh, Ljubisa Stevanovic, Rachael L. Myers-Ward, Charles R. Eddy, D. Kurt Gaskill |
637 |
|
690V, 1.00 mΩcm2 4H-SiC Double-Trench MOSFETs Authors: Yuki Nakano, R. Nakamura, H. Sakairi, Shuhei Mitani, T. Nakamura |
1069 |
|
A Reduction of Defects in the SiO2-SiC System Using the SiC Vacuum Field-Effect Transistor (VacFET) Authors: Kevin M. Speer, Philip G. Neudeck, Mehran Mehregany |
777 |