Keyword: "MOSFET"
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1.4kV Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1)

Authors: Hiroshi Kono, Takuma Suzuki, Kazuto Takao, Masaru Furukawa, Makoto Mizukami, Chiharu Ota, Shinsuke Harada, Junji Senzaki, Kenji Fukuda, Takashi Shinohe

607

10 kV SiC Power MOSFETs and JBS Diodes: Enabling Revolutionary Module and Power Conversion Technologies

Authors: Mrinal K. Das, David Grider, Scott Leslie, Ravi Raju, Michael Schutten, Allen Hefner

1225

1360 V, 5.0 mΩcm2 Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1)

Authors: Hiroshi Kono, Takuma Suzuki, Makoto Mizukami, Chiharu Ota, Shinsuke Harada, Junji Senzaki, Kenji Fukuda, Takashi Shinohe

987

2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility

Authors: Amador Pérez-Tomás, Marcel Placidi, N. Baron, Sébastien Chenot, Yvon Cordier, J.C. Moreno, José Millán, Phillippe Godignon

1207

300ºC Silicon Carbide Integrated Circuits

Authors: Zachary Stum, Vinayak Tilak, Peter A. Losee, Emad A. Andarawis, Cheng Po Chen

730

3C-SiC MOSFET with High Channel Mobility and CVD Gate Oxide

Authors: Motoki Kobayashi, Hidetsugu Uchida, Akiyuki Minami, Toyokazu Sakata, Romain Esteve, Adolf Schöner

645

4H-SiC MOSFETs with a Stable Protective Coating for Harsh Environment Applications

Authors: Walter Daves, A. Krauss, V. Häublein, A.J. Bauer, L. Frey

1089

4kV Silicon Carbide MOSFETs

Authors: Zachary Stum, A.V. Bolotnikov, Peter A. Losee, Kevin Matocha, Steve Arthur, Jeff Nasadoski, R. Ramakrishna Rao, O.S. Saadeh, Ljubisa Stevanovic, Rachael L. Myers-Ward, Charles R. Eddy, D. Kurt Gaskill

637

690V, 1.00 mΩcm2 4H-SiC Double-Trench MOSFETs

Authors: Yuki Nakano, R. Nakamura, H. Sakairi, Shuhei Mitani, T. Nakamura

1069

A Reduction of Defects in the SiO2-SiC System Using the SiC Vacuum Field-Effect Transistor (VacFET)

Authors: Kevin M. Speer, Philip G. Neudeck, Mehran Mehregany

777

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