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Articles by keyword: «MOS Capacitor»

• 4H-SiC Metal-Oxide-Semiconductor (MOS) Capacitors Fabricated by Oxidation in a Tungsten Lamp Furnace in Combination with a Microwave Plasma and Subsequent Deposition of Al₂O₃
  Published in: Silicon Carbide and Related Materials 2006 (p627)
• 4H-SiC MOS Structures Fabricated from RTCVD Si Layers Oxidized in Diluted N₂O
  Published in: Silicon Carbide and Related Materials 2004 (p673)
• 6H-SiC MOS Capacitors on Sloped Surfaces: Realisation, Characterisation and Electrical Results
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1029)
• A Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11-2 0) Face Using H₂ and H₂O Vapor Atmosphere Post-Oxidation Annealing
  Published in: Silicon Carbide and Related Materials 2001 (p1057)
• A Non-Destructive Technique for High Field Characterization of Gate Insulators in SiC MOS Capacitors
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p665)
• Characterisation of HfO₂/Si/SiC MOS Capacitors
  Published in: Silicon Carbide and Related Materials 2010 (p674)
• Characterization of MOS Capacitors Fabricated on n-type 4H-SiC Implanted with Nitrogen at High Dose
  Published in: Silicon Carbide and Related Materials 2006 (p639)
• Characterization of SiC Passivation Using MOS Capacitor Ultraviolet-Induced Hysteresis
  Published in: Silicon Carbide and Related Materials 2004 (p589)
• Characterization of the SiO₂/SiC Interface with Impedance Spectroscopy
  Published in: Silicon Carbide and Related Materials 2008 (p501)
• Comparative Study of Thermal Oxides and Post-Oxidized Deposited Oxides on n-Type Free Standing 3C-SiC
  Published in: Silicon Carbide and Related Materials 2009 (p829)
• Comparison of Inversion Layer Electron Transport of Lightly Doped 4H and 6H SiC MOSFETs
  Published in: Silicon Carbide and Related Materials 2009 (p1005)
• Control of the Flatband Voltage of 4H-SiC Metal-Oxide Semiconductor (MOS) Capacitors by Co-Implantation of Nitrogen and Aluminum
  Published in: Silicon Carbide and Related Materials 2006 (p555)
• Correlation between Thermal Oxide Breakdown and Defects in n-Type 4H-SiC Epitaxial Wafers
  Published in: Silicon Carbide and Related Materials 2007 (p775)
• Defect Control in Growth and Processing of 4H-SiC for Power Device Applications
  Published in: Silicon Carbide and Related Materials 2009 (p645)
• Direct Observation of Dielectric Breakdown Spot in Thermal Oxides on 4H-SiC(0001) Using Conductive Atomic Force Microscopy
  Published in: Silicon Carbide and Related Materials 2009 (p821)