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Articles by keyword: «MOS Structure»

• A Comparison of Quantum Correction Models for Nanoscale MOS Structures under Inversion Conditions
  Published in: Cross-Disciplinary Applied Research in Materials Science and Technology (p603)
• An Experimental Study of Ion Beam and ECR Hydrogenation of Self-Ion Implantation Damage in Silicon by Admittance Spectroscopy and X-Ray Triple Crystal Diffractometry
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p483)
• Characterization of Band Diagrams of Different Metal-SiO₂-SiC(3C) Structures
  Published in: HeteroSiC & WASMPE 2011 (p99)
• Characterization of the M. O. S. Structure by the Surface Photoelectrical Voltage Method
  Published in: Semiconductor Processing and Characterization with Lasers (p279)
• Effect of Off-Angle from Si (0001) Surface and Polytype on Surface Morphology of SiC and C-V Characteristics of SiC MOS Structures
  Published in: Silicon Carbide and Related Materials - 1999 (p1283)
• Effect of Post-Metal Annealing on the Quality of Thermally Grown Silicon Dioxide on 6H- and 4H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p849)
• Electrical Properties and Reliability of Vapor Jet Deposited Oxide on SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p865)
• Generation Mechanisms of Trapped Charges in Oxide Layers of 6H-SiC MOS Structures Irradiated with Gamma-Rays
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1017)
• Interface Properties of 4H-SiC MOS Structures Studied by a Slow Positron Beam
  Published in: Positron Annihilation - ICPA-13 (p144)
• Investigation of SiO₂/SiC Interface using Positron Annihilation Technique
  Published in: Silicon Carbide and Related Materials 2003 (p1301)
• Radiation Effect of MOS Structure Irradiated by 0.8MeV Electron Beam
  Published in: Electrical Power & Energy Systems (p1917)
• Role of Electron / Hole Processes in the Initial Stage of Silicon Anodization
  Published in: Passivation of Metals and Semiconductors (p115)
• Structural Defects at SiO₂/SiC Interfaces Detected by Positron Annihilation
  Published in: Silicon Carbide and Related Materials - 2002 (p559)
• Theoretical Studies for Si and C Emission into SiC Layer during Oxidation
  Published in: Silicon Carbide and Related Materials 2010 (p429)
• X-Ray Diffractometry and Admittance Spectroscopy Investigation of Silicon Implanted at Low Energies with Oxygen, Argon, or Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p459)