Papers by Keyword: Magnetron Reactive Sputtering

Abstract: Co (t nm)/TiO₂ (200 nm) films were prepared by DC facing-target magnetron reactive sputtering system onto glass substrates at room temperature. The influence of the Co distribution on microstructure and magnetic properties of films was investigated in detail. The results indicate that CoTiO₂ thin films with t= 2 nm island-type deposited showed a homogeneous structure, and pure ferromagnetic properties of thin films are only attributed to the CoTiO₂ phases. On the other hand, in case of thin films above t= 2nm, the overall ferromagnetic properties depended on both CoTiO₂ and CoTi phases.

Abstract: The thin films of W-doped VO₂ were synthesized onto Mo substrates using reactive DC and RF magnetic co-sputtering deposition techniques. The effects of W dopant on the semiconductor to metal phase transition of bare VO₂ were investigated with measuring X-ray diffraction (XRD) , QJ31Wheatstone Bridge and the internal friction and modulus vs temperature. The transition temperatures of VO₂ thin film from monoclinic semiconductor to tetragonal metal are decreased from 68°C to 40°C with the curves of resistance vs temperature and modulus vs temperature. In addition to, the size of grains W-doped VO₂ is more than that of un-doped VO₂, but more smoother.

Abstract: The convex surface of the infrared dome is exposed to the harsh environment of the outside world, and therefore requires a coating which not only increases transmission but is able to withstand rain erosion so as to enhance system performance. This paper deals with the techniques that were developed to deposit a uniform thick SiO2 coating for sapphire dome by radio frequency magnetron sputtering. Results show that average transmission increment in wavelength range from 3 to 5um for the sapphire dome coated on convex surface was more than 4.0%. The transmission non-uniformity over the convex surface of the coated sapphire dome was less than 1.7%.

Abstract: TiO2 films were deposited by using mid-frequency twin magnetron reactive sputtering technique at ambient temperature on quartz and Si wafer. The films were annealed after deposition. The phase composition and surface morphology of the TiO2 films were characterized by X-ray diffraction, Raman spectroscopy, and scanning electron microscopy, while the optical properties and contact angle were measured using a UV-Vis spectrophotometer and a contact angle meter. It is indicated that anatase phase dominates below 900°C and a mixture of rutile and anatase exists in the film annealed at 1000°C. Furthermore, the hydrophilic property depends on phase composition and morphological change in TiO2 films.